FM24CL16B-DG RAMTRON [Ramtron International Corporation], FM24CL16B-DG Datasheet - Page 5

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FM24CL16B-DG

Manufacturer Part Number
FM24CL16B-DG
Description
16Kb Serial 3V F-RAM Memory
Manufacturer
RAMTRON [Ramtron International Corporation]
Datasheet

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Word Address
After the FM24CL16B (as receiver) acknowledges
the slave ID, the master will place the word address
on the bus for a write operation. The word address is
the lower 8-bits of the address to be combined with
the 3-bits of the page select to specify the exact byte
to be written. The complete 11-bit address is latched
internally.
No word address occurs for a read operation, though
the 3-bit page select is latched internally. Reads
always use the lower 8-bits that are held internally in
the address latch. That is, reads always begin at the
address following the previous access. A random read
address can be loaded by doing a write operation as
explained below.
After transmission of each data byte, just prior to the
acknowledge, the FM24CL16B increments the
internal address latch. This allows the next sequential
byte to be accessed with no additional addressing.
After the last address (7FFh) is reached, the address
latch will roll over to 000h. There is no limit on the
number of bytes that can be accessed with a single
read or write operation.
Data Transfer
After all address information has been transmitted,
data transfer between the bus master and the
FM24CL16B can begin. For a read operation the
device will place 8 data bits on the bus then wait for
an acknowledge. If the acknowledge occurs, the next
sequential
acknowledge is not sent, the read operation is
concluded. For a write operation, the FM24CL16B
will accept 8 data bits from the master then send an
acknowledge. All data transfer occurs MSB (most
significant bit) first.
Rev. 1.4
Feb. 2011
1
0
Slave ID
byte
1
Figure 4. Slave Address
will
0
be
A2
transferred.
Select
Page
A1
A0
If
R/W
the
Memory Operation
The FM24CL16B is designed to operate in a manner
very similar to other 2-wire interface memory
products. The major differences result from the
higher performance write capability of FRAM
technology. These improvements result in some
differences between the FM24CL16B and a similar
configuration EEPROM during writes. The complete
operation for both writes and reads is explained
below.
Write Operation
All writes begin with a slave ID then a word address
as previously mentioned. The bus master indicates a
write operation by setting the LSB of the Slave
Address to a 0. After addressing, the bus master
sends each byte of data to the memory and the
memory generates an acknowledge condition. Any
number of sequential bytes may be written. If the
end of the address range is reached internally, the
address counter will wrap from 7FFh to 000h.
Unlike other nonvolatile memory technologies, there
is no write delay with FRAM. The entire memory
cycle occurs in less time than a single bus clock.
Therefore, any operation including read or write can
occur immediately following a write. Acknowledge
polling, a technique used with EEPROMs to
determine if a write is complete is unnecessary and
will always return a ‘ready’ condition.
An actual memory array write occurs after the 8
data bit is transferred. It will be complete before the
acknowledge is sent. Therefore, if the user desires to
abort a write without altering the memory contents,
this should be done using start or stop condition
prior to the 8
page buffering.
The memory array can be write protected using the
WP pin. Setting the WP pin to a high condition
(VDD) will write-protect all addresses. The
FM24CL16B will not acknowledge data bytes that
are written to protected addresses. In addition, the
address counter will not increment if writes are
attempted to these addresses. Setting WP to a low
state (VSS) will deactivate this feature.
Figure 5 and 6 below illustrates both a single-byte
and multiple-byte writes.
th
FM24CL16B - 16Kb 3V I2C F-RAM
data bit. The FM24CL16B needs no
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