BAS116LT1D ONSEMI [ON Semiconductor], BAS116LT1D Datasheet
BAS116LT1D
Manufacturer Part Number
BAS116LT1D
Description
Switching Diode
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.BAS116LT1D.pdf
(3 pages)
BAS116LT1G
Switching Diode
Features
•
•
•
•
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Total Device Dissipation FR−5 Board (Note 1)
T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2) T
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
A
Compliant
Low Leakage Current Applications
Medium Speed Switching Times
Available in 8 mm Tape and Reel
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
= 25°C
Use BAS116LT1 to order the 7 inch/3,000 unit reel
Characteristic
Rating
A
= 25°C
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to
Value
+150
Max
200
500
225
556
300
417
1.8
2.4
75
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
mW
mW
°C
BAS116LT1G
BAS116LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
CATHODE
ORDERING INFORMATION
JV = Specific Device Code
M = Date Code*
G
MARKING DIAGRAM
http://onsemi.com
SOT−23 (TO−236AB)
= Pb−Free Package
3
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
1
CASE 318
STYLE 8
JV M G
2
Publication Order Number:
G
3
10000/Tape & Reel
3000/Tape & Reel
Shipping
1
ANODE
BAS116LT1/D
†
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BAS116LT1D Summary of contents
Page 1
BAS116LT1G Switching Diode Features • Low Leakage Current Applications • Medium Speed Switching Times • Available Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel • These Devices are Pb−Free, Halogen Free/BFR Free and ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 mAdc) BR Reverse Voltage Leakage Current ( Vdc) R Reverse Voltage Leakage Current ( Vdc Forward Voltage (I = 1.0 mAdc) F Forward ...
Page 3
D SEE VIEW *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...