BAS116LT1_04 ONSEMI [ON Semiconductor], BAS116LT1_04 Datasheet - Page 2

• Manufacturer Part Number: BAS116LT1_04
• Description: Switching Diod
• Manufacturer: ONSEMI [ON Semiconductor]

+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (V
Reverse Voltage Leakage Current
Forward Voltage (I
Forward Voltage
Forward Voltage
Forward Voltage
Diode Capacitance (V
Reverse Recovery Time (I
50 W Output
Generator
Pulse
820 W
0.1 mF
(I
(I
(I
F
F
F
F
2.0 k
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
100 mH
R
= 0 V, f = 1.0 MHz)
F
= I
BR
R
I
F
Characteristic
= 10 mAdc) (Figure 1)
= 100 mAdc)
(V
1. A 2.0 kW variable resistor adjusted for a Forward Current (I
2. Input pulse is adjusted so I
3. t
DUT
R
R
= 75 Vdc)
= 75 Vdc, T
p
Figure 1. Recovery Time Equivalent Test Circuit
» t
(T
A
rr
= 25 C unless otherwise noted)
0.1 mF
OSCILLOSCOPE
J
50 W INPUT
SAMPLING
= 150 C)
http://onsemi.com
BAS116LT1
R(peak)
V
2
R
is equal to 10 mA.
t
r
INPUT SIGNAL
10%
90%
t
p
Symbol
V
C
V
(BR)
I
t
R
rr
D
F
t
F
) of 10 mA.
I
I
Min
R
F
75
−
−
−
−
−
−
−
−
(I
F
= I
at i
R
OUTPUT PULSE
1000
1100
1250
= 10 mA; MEASURED
Max
R(REC)
900
5.0
2.0
3.0
80
t
−
rr
i
R(REC)
= 1.0 mA)
= 1.0 mA
t
nAdc
Unit
Vdc
mV
pF
ms