VS-8EWF04S-M3 VISHAY [Vishay Siliconix], VS-8EWF04S-M3 Datasheet - Page 4

• Manufacturer Part Number: VS-8EWF04S-M3
• Description: Surface Mountable Fast Soft Recovery Diode, 8A
• Manufacturer: VISHAY [Vishay Siliconix]

VS-8EWF02S-M3, VS-8EWF04S-M3, VS-8EWF06S-M3
Vishay Semiconductors
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 9 - Recovery Time Characteristics, T
Fig. 8 - Recovery Time Characteristics, T
Fig. 7 - Forward Voltage Drop Characteristics
100
0.4
0.3
0.2
0.1
0.4
0.3
0.2
0.1
10
1
R ate Of Fall Of Forward Current - dI/ dt (A/ µs)
0
R ate Of F all Of Forward Current - dI/ dt (A/ µs )
0
0.5
0
0
Instantaneous Forward Voltage (V)
1
40
40
I
F M
I
F M
1.5
= 20 A
[e-mail], [e-mail],
80
80
= 20 A
For technical questions within your region, please contact one of the following:
10 A
T = 25°C
T = 150°C
10 A
J
J
8E WF ..S S eries
120
120
8 A
2
8 A
8EWF..S S eries
T = 25 °C
8E WF..S S eries
T = 150 °C
J
J
5 A
5 A
2.5
160
160
2 A
2 A
1 A
1 A
This document is subject to change without notice.
J
Surface Mountable Fast Soft
J
= 150 °C
= 25 °C
200
200
3
Recovery Diode, 8 A
Fig. 11 - Recovery Charge Characteristics, T
Fig. 10 - Recovery Charge Characteristics, T
Fig. 12 - Recovery Current Characteristics, T
[e-mail]
1.4
1.2
0.8
0.6
0.4
0.2
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
16
14
12
10
Rate Of Fall Of F orward Current - dI/ dt (A/ µs )
Rate Of F all Of F orward Current - dI/ dt (A/ µs)
1
0
Rate Of Fall Of F orward Current - dI/ dt (A/ µs)
8
6
4
2
0
2
1
0
0
0
8EWF..S S eries
T = 25 °C
8EWF..S S eries
T = 150 °C
8EWF..S S eries
T = 25 °C
J
J
J
40
40
40
80
80
80
120
120
120
www.vishay.com/doc?91000
Document Number: 93375
I
I
I
F M
F M
F M
160
160
160
= 20 A
= 20 A
= 20 A
Revision: 04-Apr-11
10 A
10 A
10 A
5 A
8 A
2 A
1 A
8 A
5 A
2 A
1 A
8 A
5 A
2 A
1 A
J
J
J
200
200
200
= 150 °C
= 25 °C
= 25 °C