ACS10DMSR INTERSIL [Intersil Corporation], ACS10DMSR Datasheet

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ACS10DMSR

Manufacturer Part Number
ACS10DMSR
Description
Radiation Hardened Triple Three-Input NAND Gate
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
April 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 1.25 Micron Radiation Hardened SOS CMOS
• Total Dose 300K RAD (Si)
• Single Event Upset (SEU) Immunity
• SEU LET Threshold >80 MEV-cm
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current 1 A at VOL, VOH
Description
The Intersil ACS10MS is a radiation hardened triple three-input
NAND gate. A high on all inputs forces the output to a low state.
The ACS10MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of the
radiation hardened, high-speed, CMOS/SOS Logic Family.
Ordering Information
Truth Table
ACS10DMSR
ACS10KMSR
ACS10D/Sample
ACS10K/Sample
ACS10HMSR
<1 x 10
- VIL = 30% of VCC Max
- VIH = 70% of VCC Min
NOTE: L = Logic Level Low, H = Logic Level High
PART NUMBER
-10
An
H
H
H
H
L
L
L
L
Errors/Bit-Day (Typ)
INPUTS
Bn
H
H
H
H
L
L
L
L
11
RAD (Si)/s, 20ns Pulse
TEMPERATURE RANGE
Cn
H
H
H
H
L
L
L
L
o
2
C to +125
/mg
-55
-55
o
o
C to +125
C to +125
+25
+25
+25
OUTPUT
o
o
o
o
C
C
C
C
Yn
H
H
H
H
H
H
H
L
o
o
C
C
1
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
SCREENING LEVEL
Pinouts
Functional Diagram
MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C
MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C
GND
(5, 11, 13)
(2, 4, 10)
(1, 3, 9)
A1
B1
A2
B2
C2
Y2
An
Bn
Cn
ACS10MS
Triple Three-Input NAND Gate
14 LEAD CERAMIC DUAL-IN-LINE
14 LEAD CERAMIC FLATPACK
GND
A1
B1
A2
B2
C2
Y2
1
2
3
4
5
6
7
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
14
13
12
11
10
Spec Number
9
8
14
13
12
10
11
PACKAGE
9
8
File Number
VCC
C1
Y1
C3
B3
A3
Y3
(6, 8, 12)
518814
VCC
C1
Y1
C3
B3
A3
Y3
Yn
3630

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ACS10DMSR Summary of contents

Page 1

... NAND gate. A high on all inputs forces the output to a low state. The ACS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family. Ordering Information PART NUMBER TEMPERATURE RANGE ACS10DMSR ACS10KMSR ACS10D/Sample ACS10K/Sample ACS10HMSR Truth Table INPUTS ...

Page 2

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +6.0V Input Voltage Range . . . . ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Propagation Delay TPHL VCC = 4.5V, VIH = 4.5V, VIL = 0V TPLH VCC = 4.5V, VIH = 4.5V, VIL = 0V NOTES: 1. All voltages referenced to device GND ...

Page 4

PARAMETER Supply Current Output Current NOTE: 1. All delta calculations are referenced to 0 hour readings or pre-life readings. CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test 1 (Postburn-In) Interim Test 2 (Postburn-In) PDA Interim Test 3 (Postburn-In) PDA Final Test ...

Page 5

Intersil - Space Products MS Screening Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull Method 2023 100% Internal Visual Inspection Method 2010 100% Temperature Cycling ...

Page 6

Die Characteristics DIE DIMENSIONS: 88 mils x 88 mils 2,240mm x 2,240mm METALLIZATION: Type: AlSiCu Å Metal 1 Thickness: 6.75k (Min), 8.25k Å Å Metal 2 Thickness: 9k (Min), 11k GLASSIVATION: Type: SiO 2 Å Å Thickness Metallization ...

Page 7

Ceramic Dual-In-Line Metal Seal Packages (SBDIP) -A- - bbb BASE S2 PLANE -C- SEATING PLANE ccc ...

Page 8

Ceramic Metal Seal Flatpack Packages (Flatpack) e PIN NO AREA - 0.004 0.036 - SEATING AND BASE PLANE c1 LEAD FINISH ...

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