bg3140 Infineon Technologies Corporation, bg3140 Datasheet

no-image

bg3140

Manufacturer Part Number
bg3140
Description
Dual N-channel Mosfet Tetrode
Manufacturer
Infineon Technologies Corporation
Datasheet
DUAL N-Channel MOSFET Tetrode
BG3140
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation, T
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1 For calculation of R
Type
BG3140
BG3140R
Low noise gain controlled input stages of UHF-
Two AGC amplifiers in one single package
Integrated gate protection diodes
Low noise figure
High gain, high forward transadmittance
Improved cross modulation at gain reduction
High AGC-range
and VHF-tuners with 5V supply voltage
thJA
BG3140R
Package
SOT363
SOT363
please refer to Application Note Thermal Resistance
1)
S
78°C
1=G1
1=G1
2=G2
2=S
AGC
HF
Input
1
Pin Configuration
3=D
3=D
Symbol
V
I
P
T
T
Symbol
R
R
D
G1
I
V
stg
ch
DS
tot
thchs
G1/2SM
V
G1/G2S
GG
G2
G1
4=D
4=D
6
GND
5=S
5=G2
-55 ... 150
5
Value
Value
Drain
160
150
25
280
8
1
6
4
6=G1
6=G1
HF Output
+ DC
Feb-27-2004
EHA07461
BG3140...
1
VPS05604
Marking
KDs
KKs
2
Unit
V
mA
V
mW
°C
Unit
K/W
3

Related parts for bg3140

bg3140 Summary of contents

Page 1

... AGC G1 HF Input Pin Configuration 1=G1 2=G2 3=D 1=G1 2=S 3=D Symbol G1/2SM V G1/G2S 78°C P tot T stg T ch Symbol R thchs 1 BG3140... VPS05604 Drain HF Output + DC GND EHA07461 Marking 4=D 5=S 6=G1 KDs 4=D 5=G2 6=G1 KKs Value 160 -55 ... 150 150 Value 280 Feb-27-2004 3 2 Unit V ...

Page 2

... G2S D Gate2-source pinch-off voltage µ Symbol V (BR) (BR)G1SS = (BR)G2SS = G1SS + I G2SS = 0 I DSS = 4 DSX = G1S( µA V G2S(p) 2 BG3140... Values Unit min. typ. max µ µ 0 0.6 - Feb-27-2004 ...

Page 3

... MHz Gain control range 4... 800 MHz DS G2S Cross-modulation k=1 AGC = 0 dB AGC = 10 dB AGC = 40 dB Symbol g1ss C dss =50MHz, f =60MHz X unw mod 3 BG3140... Values min. typ. max ...

Page 4

... Gate 1 current G2S 160 1.3V µA 1.2V 120 100 1. 0. BG3140... = ( G1S = Parameter 0 0 0.5 1 1.5 2 2.5 Feb-27-2004 80 µA 100 3. ...

Page 5

... DS V G2S 3. Drain current I = 80k V G2S R = Parameter 3 BG3140... = ( G1S = Parameter 1.2 1.4 1.6 1 0.2 0.4 0.6 0 Feb-27-2004 4V 3V 2.5V 2V 2.2 V G1S ...

Page 6

... Crossmodulation V = (AGC) unw 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm AGC V AGC R1 2.2 µH 10 kOhm 4n7 4n7 RG1 50 Ohm BG3140... V DS 4n7 4n7 RL 50 Ohm Feb-27-2004 ...

Related keywords