TP0604N3 SUTEX [Supertex, Inc], TP0604N3 Datasheet

TP0604N3

Manufacturer Part Number

TP0604N3

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.TP0604N3.pdf (4 pages)

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Features

❏ Low threshold — -2.4V max.

❏ High input impedance

❏ Low input capacitance — 95pF typical

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Ordering Information

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Distance of 1.6 mm from case for 10 seconds.

Same as SO-20 with 300 mil wide body.

-40V

DSS

DGS

(max)

2.0Ω

DS(ON)

(min)

-2.0A

D(ON)

-55°C to +150°C

P-Channel Enhancement-Mode

Vertical DMOS FETs

(max)

-2.4V

300°C

± 20V

GS(th)

DGS

DSS

TP0604N3

Order Number / Package

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Package Options

TO-92

Note 1:

Note 2:

See Package Outline section for dimensions.

See Array section for quad pinouts.

TO-92

TP0604WG

SOW-20*

S G D

Low Threshold

SOW-20

TP0604

Related parts for TP0604N3

TP0604N3 Summary of contents

Page 1

... GS(th) (min) (max) TO-92 -2.0A -2.4V TP0604N3 Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transis- tors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 -0.43A SOW-20 Refer to Enhancement Mode MOSFET Arrays Section * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter Drain-to-Source Breakdown Voltage BV DSS V Gate Threshold Voltage ...

Page 3

Typical Performance Curves ° ° ° ° 3 TP0604 ° ° ...

Page 4

Typical Performance Curves BV Variation with Temperature DSS 1.1 1.0 0.9 - (°C) j Transfer Characteristics -- -25V (volts) GS Capacitance vs. Drain-to-Source Voltage ...

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