VN1504NW SUTEX [Supertex, Inc], VN1504NW Datasheet
VN1504NW
Manufacturer Part Number
VN1504NW
Description
N-Channel Enhancement-Mode Vertical DMOS FET
Manufacturer
SUTEX [Supertex, Inc]
Datasheet
1.VN1504NW.pdf
(2 pages)
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
Applications
❏ Motor controls
❏ Converters
❏ Amplifiers
❏ Switches
❏ Power supply circuits
❏ Drivers (relays, hammers, solenoids, lamps,
†
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Ordering Information
MIL visual screening available.
Distance of 1.6 mm from case for 10 seconds.
BV
BV
memories, displays, bipolar transistors, etc.)
40V
60V
90V
DSS
DGS
/
ISS
and fast switching speeds
R
(max)
3.0Ω
3.0Ω
3.0Ω
DS(ON)
(min)
I
2.0A
2.0A
2.0A
D(ON)
Order Number / Package
N-Channel Enhancement-Mode
Vertical DMOS FET
-55°C to +150°C
VN1504NW
VN1506NW
VN1509NW
Die
BV
BV
300°C
†
± 20V
DGS
DSS
1
Advanced DMOS Technology
Thisi enhancement-mode (normally-off) transistori utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
VN1504/ VN1506/ VN1509
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VN1504NW Summary of contents
Page 1
... Distance of 1.6 mm from case for 10 seconds. VN1504/ VN1506/ VN1509 N-Channel Enhancement-Mode Vertical DMOS FET Order Number / Package † Die VN1504NW VN1506NW VN1509NW Advanced DMOS Technology Thisi enhancement-mode (normally-off) transistori utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with ...
Page 2
Electrical Characteristics Symbol Parameter Drain-to-Source BV DSS Breakdown Voltage V Gate Threshold Voltage GS(th) ∆V Change in V with Temperature GS(th) GS(th) I Gate Body Leakage GSS I Zero Gate Voltage Drain Current DSS I ON-State Drain Current D(ON) R ...