TP0620N3 SUTEX [Supertex, Inc], TP0620N3 Datasheet

TP0620N3

Manufacturer Part Number

TP0620N3

Description

P-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.TP0620N3.pdf (4 pages)

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Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Ordering Information

†

Features

❏ Low threshold — -2.4 V max

❏ High input impedance

❏ Low input capacitance — 85pF typical

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

❏ General purpose line drivers

❏ Telecom switches

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Distance of 1.6 mm from case for 10 seconds.

MIL visual screening available

-200V

DSS

DGS

(max)

12Ω

DS(ON)

-0.75A

(min)

D(ON)

-55°C to +150°C

P-Channel Enhancement-Mode

Vertical DMOS FETs

(max)

-2.4V

300°C

GS(th)

± 20V

DGS

DSS

Order Number / Package

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis-

tors utilize a vertical DMOS structure and Supertex's well-proven

silicon-gate manufacturing process. This combination produces

devices with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Package Option

Note: See Package Outline section for dimensions.

TP0620N3

TO-92

S G D

Low Threshold

TP0620

Related parts for TP0620N3

TP0620N3 Summary of contents

Page 1

... Package Option BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. TP0620 Low Threshold TO-92 TP0620N3 TO-92 ...

Page 2

Thermal Characteristics Package I (continuous)* D TO-92 -175mA * I (continuous) is limited by max rated Electrical Characteristics Symbol Parameter BV Drain-to-Source Breakdown Voltage DSS V Gate Threshold Voltage GS(th) ∆V Change in V with Temperature ...

Page 3

Typical Performance Curves ° ° ° ° 3 TP0620 ° ° ...

Page 4

Typical Performance Curves BV Variation with Temperature DSS 1.15 1.1 1.05 1.0 0.95 0.9 - (°C) j Transfer Characteristics -2 -25V DS -1 (volts) GS Capacitance vs. Drain-to-Source Voltage 200 ...

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