VN2106 SUTEX [Supertex, Inc], VN2106 Datasheet

VN2106

Manufacturer Part Number

VN2106

Description

N-Channel Enhancement-Mode Vertical DMOS FETs

Manufacturer

SUTEX [Supertex, Inc]

Datasheet

1.VN2106.pdf (4 pages)

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Features

❏ Commercial and Military versions available

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

❏ Low C

❏ High input impedance and high gain

Applications

❏ Motor controls

❏ Amplifiers

❏ Power supply circuits

❏ Converters

❏ Switches

❏ Drivers (relays, hammers, solenoids, lamps,

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

Ordering Information

†

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

MIL visual screening available

100V

60V

memories, displays, bipolar transistors, etc.)

DSS

DGS

/ R

ISS

(max)

4.0Ω

DS(ON)

and fast switching speeds

VN2106N3

TO-92

—

Order Number / Package

TO-236AB*

VN2110K1

–

N-Channel Enhancement-Mode

Vertical DMOS FETs

-55°C to +150°C

VN2110ND

300°C

± 20V

Die

—

DGS

DSS

†

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Note: See Package Outline section for dimensions.

where ❋ = 2-week alpha date code

Product marking for SOT-23:

TO-236AB

(SOT-23)

top view

N1A❋

TO-92

S G D

VN2106

VN2110

Related parts for VN2106

VN2106 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 VN2106 VN2110 Product marking for SOT-23: N1A❋ TO-92 TO-236AB (SOT-23) top view ...

Page 2

... V DD 10% OUTPUT 0V 90% I (pulsed) Power Dissipation* D ° 1.0A 1.0W 0.8A 0.36W (T = 25° 25°C unless otherwise specified) Min Typ Max VN2110 100 VN2106 60 0.8 -3.8 -5.5 0.1 100 100 0.6 4.5 3.0 0.70 150 400 1.2 400 90% GENERATOR t (OFF d(OFF) F 10% 90% 2 † ...

Page 3

... SOT-23 (pulsed) 10 100 3 Saturation Characteristics 2.0 1.6 1.2 0.8 0 (volts) DS Power Dissipation vs. Case Temperature 2.0 TO-92 1.0 TO-236AB 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 TO-236AB P = 0.36W D 0 25°C A TO-92 0 25° 0.001 0.01 0.1 1.0 t (seconds) p VN2106/VN2110 10V 150 10 ...

Page 4

... D V and R Variation with Temperature GS(th) DS(ON 10V, 0.5A DS(ON 1mA GS(th) - 100 T (°C) j Gate Drive Dynamic Characteristics 10V 40V 0.6 0 0.2 0.4 0.8 Q (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com VN2106/VN2110 2.5 2.0 1.6 1.2 0.8 0.4 0 150 1.0 11/12/01 ...

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