SI4473BDY-E3 VISHAY [Vishay Siliconix], SI4473BDY-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4473BDY-E3
• Description: P-Channel 14-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si4473BDY
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
0
0
b
Parameter
V
1
V
a
a
GS
DS
Output Characteristics
= 5 thru 3 V
− Drain-to-Source Voltage (V)
a
2
a
a
J
= 25_C UNLESS OTHERWISE NOTED)
3
1.5 V
2.5 V
2 V
Symbol
V
r
r
I
DS(
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
R
t
SD
t
t
4
rr
fs
gs
gd
r
f
g
g
)
5
New Product
V
I
DS
V
D
DS
^ −1 A, V
= −10 V, V
I
F
= −14 V, V
V
V
V
V
V
V
V
V
= −2.3 A, di/dt = 100 A/ms
DS
V
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
DS
= −2.3 A, V
= −5 V, V
= V
= −4.5 V, I
= −2.5 V, I
= −17 V, I
= −14 V, V
= −15 V, R
= −15 V, R
= 0 V, V
GEN
f = 1 MHz
GS
GS
GS
, I
= −4.5 V, R
= −4.5 V, I
D
= 0 V, T
GS
GS
= −250 mA
D
D
GS
D
GS
L
L
= −4.5 V
= −2.5 A
= −13 A
= "12 V
= −13 A
= 10 W
= 10 W
= 0 V
= 0 V
J
50
40
30
20
10
D
= 70_C
G
0
= −13 A
0.0
= 6 W
0.5
V
GS
Transfer Characteristics
Min
−0.6
−30
1.5
− Gate-to-Source Voltage (V)
1.0
25_C
T
C
= 125_C
1.5
0.009
0.014
Typ
−0.7
140
140
2.7
45
53
22
55
95
81
11
S-32676—Rev. A, 29-Dec-03
Document Number: 72691
2.0
−55_C
"100
Max
0.011
0.018
−1.4
−1.1
−10
145
210
210
120
4.5
−1
80
85
2.5
Unit
nA
mA
mA
nC
ns
V
A
W
W
S
V
W
3.0