hy5ps1g831cfp Hynix Semiconductor, hy5ps1g831cfp Datasheet - Page 14

• Manufacturer Part Number: hy5ps1g831cfp
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Dec 2006
3.3 Output Buffer Characteristics
3.3.1 Output AC Test Conditions
Note:
3.3.2 Output DC Current Drive
Note:
1. The VDDQ of the device under test is referenced.
1. V
2. V
3. The dc value of V
4.
Symbol
Symbol
I
I
V
OH(dc)
OL(dc)
and V
The values of I
device drive current capability to ensure V
delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating
point (see Section 3.3) along a 21 ohm load line to define a convenient driver current for measurement.
OTR
DDQ
DDQ
DDQ
= 1.7 V; V
= 1.7 V; V
Output Timing Measurement Reference Level
Output Minimum Source DC Current
Output Minimum Sink DC Current
- 280 mV.
OH(dc)
OUT
OUT
REF
= 1420 mV. (V
= 280 mV. V
applied to the receiving device is set to V
and I
OL(dc)
Parameter
Parameter
are based on the conditions given in Notes 1 and 2. They are used to test
OUT
OUT
/I
OL
- V
must be less than 21 ohm for values of V
IH
DDQ
min plus a noise margin and V
)/I
OH
must be less than 21 ohm for values of V
TT
SSTL_18 Class II
0.5 * V
SSTl_18
- 13.4
13.4
IL
DDQ
max minus a noise margin are
HY5PS1G1631C(L)FP
OUT
HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
between 0 V and 280 mV.
Units
Units
OUT
mA
mA
V
between V
Notes
Notes
1, 3, 4
2, 3, 4
1
DDQ
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