hy5ps1g831cfp Hynix Semiconductor, hy5ps1g831cfp Datasheet - Page 20

• Manufacturer Part Number: hy5ps1g831cfp
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

Rev. 0.1 /Dec 2006
3.5. Input/Output Capacitance
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ T
Refresh Parameters by Device Density
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Note 1: 8 bank device Precharge All Allowance : tRP for a Precharge All command for an 8 Bank device will equal to
tRP+1*tCK, where tRP are the values for a single bank Precharge, which are shown in the table above.
Refresh to Active/Refresh command
Average periodic refresh interval
Input/output capacitance delta, DQ, DM, DQS, DQS
Input capacitance delta, all other input-only pins
Bin(CL-tRCD-tRP)
Input/output capacitance, DQ, DM, DQS, DQS
CAS Latency
Input capacitance, all other input-only pins
Parameter
tRP
Speed
Input capacitance delta, CK and CK
tRCD
tRAS
tRC
CASE
Parameter
Note1
Input capacitance, CK and CK
time
≤ 95℃; V
Parameter
DDQ
5-5-5
12.5
12.5
57.5
min
45
5
= 1.8 V +/- 0.1V; V
DDR2-800
tREFI
0 ℃≤ T
85℃＜T
6-6-6
min
15
15
45
60
6
Symbol
tRFC
CASE
CASE
DD
≤ 95℃
≤ 95℃
4-4-4
Symbol
= 1.8V +/- 0.1V)
min
12
12
45
57
CDCK
CDIO
4
CCK
CDI
CIO
CI
DDR2-667
256Mb 512Mb
7.8
3.9
75
Min
5-5-5
1.0
1.0
2.5
min
DDR2 400
DDR2 533
x
x
x
15
15
45
60
5
105
7.8
3.9
Max
0.25
0.25
2.0
2.0
4.0
0.5
DDR2-533
HY5PS1G1631C(L)FP
4-4-4
127.5
1Gb
min
7.8
3.9
15
15
45
60
HY5PS1G431C(L)FP
HY5PS1G831C(L)FP
4
Min
1.0
1.0
2.5
DDR2 667
DDR2 800
x
x
x
2Gb
195
7.8
3.9
DDR2-400
3-3-3
min
Max
15
15
40
55
0.25
0.25
2.0
2.0
3.5
0.5
3
327.5
4Gb
7.8
3.9
Units
Units
Units
tCK
pF
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
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