hy5ps1g821m Hynix Semiconductor, hy5ps1g821m Datasheet - Page 78

• Manufacturer Part Number: hy5ps1g821m
• Description: 1gb Ddr2 Sdram
• Manufacturer: Hynix Semiconductor

1HY5PS12421(L)M
HY5PS12821(L)M
application clock period. nWR refers to the t WR parameter stored in the MRS.
Example: For DDR533 at t CK = 3.75 ns with t WR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns)
clocks =4 +(4)clocks=8clocks.
15. The clock frequency is allowed to change during self–refresh mode or precharge power-down mode. In
case of clock frequency change during precharge power-down, a specific procedure is required as
described in section 2.9.
16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn
on.
ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND.
17. ODT turn off time min is when the device starts to turn off ODT resistance.
ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD.
Rev. 0.2 / Oct. 2005
78