MRF18060ALR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF18060ALR3_08 Datasheet

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MRF18060ALR3_08

Manufacturer Part Number
MRF18060ALR3_08
Description
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
1.MRF18060ALR3_08.pdf (10 pages)
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN - PCS/cellular radio and WLL
applications.
• Typical GSM Performance @ 1805 MHz
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
Output Power
40μ″ Nominal.
Derate above 25°C
Power Gain — 13 dB @ 60 Watts
Efficiency — 45% @ 60 Watts
C
≥ 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF18060A
1805 - 1880 MHz, 60 W, 26 V
MRF18060ALR3
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 465 - 06, STYLE 1
M3 (Minimum)
2 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
1.03
0.97
180
150
200
NI - 780
Rev. 11, 10/2008
MRF18060ALR3
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF18060ALR3_08 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier ...

Page 2

Table 4. Electrical Characteristics (T Characteristic Off Characteristics Drain - Source Breakdown Voltage ( Vdc μAdc Zero Gate Voltage Drain Current ( Vdc Vdc Gate - ...

Page 3

BIAS C1 RF INPUT 100 nF Chip Capacitor (1203) C2, C4 Chip Capacitors Electrolytic Capacitor C5 1.2 pF Chip Capacitor C6 1.0 pF Chip ...

Page 4

V BIAS Î Î Î Î Î Î T1 Î Î Î INPUT Chip Capacitor (0805) C2 100 nF Chip Capacitor (0805) C3, C5 Chip Capacitors, ...

Page 5

R1 C1 Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î C6 Î ...

Page 6

TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD 750 500 mA 12 300 100 OUTPUT POWER (WATTS) out Figure 5. Power Gain ...

Page 7

MHz Figure 10. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 5 Ω load f = 1700 MHz f = 2100 MHz f = 2100 MHz Z source V = ...

Page 8

(FLANGE) D bbb (INSULATOR) bbb N (LID) ccc (FLANGE) MRF18060ALR3 8 PACKAGE DIMENSIONS Q 2X bbb ...

Page 9

Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 11 Oct. 2008 • Data sheet revised to ...

Page 10

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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