MRF18060B FREESCALE [Freescale Semiconductor, Inc], MRF18060B Datasheet - Page 2

• Manufacturer Part Number: MRF18060B
• Description: RF Power Field Effect Transistor
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

2
MRF18060BLR3 MRF18060BLSR3
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Drain- Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Input Capacitance (Including Input Matching Capacitor in Package)
Output Capacitance
Reverse Transfer Capacitance
Common- Source Amplifier Power Gain @ 60 W
Drain Efficiency @ 60 W
Input Return Loss
1. Part is internally matched both on input and output.
2. To meet application requirements, Freescale test fixtures have been designed to cover the full GSM1900 band, ensuring
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f = 1930 - 1990 MHz)
batch- to - batch consistency.
GS
DS
GS
DS
DS
GS
DS
DS
DS
DD
DD
DD
= 0 Vdc, I
= 26 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 26 Vdc, I
= 10 Vdc, I
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 26 Vdc, I
= 26 Vdc, I
= 26 Vdc, P
D
DS
(2)
D
D
D
DQ
DQ
= 10 μAdc)
GS
out
= 300 μAdc)
= 500 mAdc)
= 2 Adc)
(1)
= 0 Vdc)
= 500 mA, f = 1930 - 1990 MHz)
= 500 mA, f = 1930 - 1990 MHz)
= 0 Vdc)
= 60 W CW, I
(2)
Characteristic
DQ
= 500 mA,
(T
C
= 25°C unless otherwise noted)
GS
GS
GS
(2)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
V
Symbol
V
V
V
(BR)DSS
I
I
DS(on)
C
C
GS(th)
GS(Q)
C
G
GSS
IRL
DSS
oss
η
rss
iss
ps
11.5
Min
2.5
65
—
—
—
—
—
—
40
—
2
0.27
Typ
160
740
3.9
2.7
13
45
—
—
—
—
—
Freescale Semiconductor
Max
4.5
- 10
—
—
—
—
—
—
—
6
1
4
RF Device Data
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%