MRF21085LSR3_08 FREESCALE [Freescale Semiconductor, Inc], MRF21085LSR3_08 Datasheet

MRF21085LSR3_08

Manufacturer Part Number

MRF21085LSR3_08

Description

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF21085LSR3_08.pdf (11 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET

to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-

t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

applications.

• Typical 2 - Carrier W - CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Table 3. ESD Protection Characteristics

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Designed for W- CDMA base station applications with frequencies from 2110

Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

40μ″ Nominal.

Derate above 25°C

out

Power Gain — 13.6 dB

Drain Efficiency — 23%

IM3 @ 10 MHz Offset — - 37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth

= 19 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,

= 25°C

Test Conditions

Characteristic

Rating

= 28 Volts, I

= 1000 mA,

Symbol

DSS

θJC

stg

MRF21085LSR3

2110 - 2170 MHz, 90 W, 28 V

Document Number: MRF21085

LATERAL N - CHANNEL

CASE 465A - 06, STYLE 1

RF POWER MOSFET

M3 (Minimum)

1 (Minimum)

- 65 to +150

- 0.5, +65

- 0.5, +15

Value

Class

1.28

0.78

NI - 780S

224

150

200

Rev. 11, 10/2008

MRF21085LSR3

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF21085LSR3_08

MRF21085LSR3_08 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- t ...

Page 2

Table 4. Electrical Characteristics (T Characteristic Off Characteristics Drain - Source Breakdown Voltage ( Vdc 100 μAdc Zero Gate Voltage Drain Current ( Vdc Vdc Gate - ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) (continued) Two - Tone Common - Source Amplifier Power Gain ( Vdc PEP out ...

Page 4

V BIAS INPUT 0.750″ x 0.084″ Microstrip Z2 1.015″ x 0.084″ Microstrip Z3 0.480″ x 0.800″ Microstrip Z4 0.750″ x 0.050″ Microstrip Z5 0.610″ x 0.800″ Microstrip ...

Page 5

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact ...

Page 6

Vdc 1000 2135 MHz 2145 MHz 25 3.84 MHz Channel Bandwidth Peak/Avg 0.01% Probability (CCDF ...

Page 7

I = 1300 mA DQ 1150 mA 14 1000 mA 850 mA 13.5 700 OUTPUT POWER (WATTS) PEP out Figure 9. Two-Tone Power Gain versus Output Power − Vdc ...

Page 8

Z source Z load Input Matching Network Figure 13. Series Equivalent Source and Load Impedance MRF21085LSR3 2170 MHz Z Z load f = 2110 MHz f = 2170 MHz Z source f = 2110 MHz V = ...

Page 9

U 4X (FLANGE (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING PLANE A A (FLANGE) RF Device Data Freescale Semiconductor PACKAGE ...

Page 10

Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 11 Oct. 2008 • Data sheet revised to ...

Page 11

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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