MRF281SR1_06 FREESCALE [Freescale Semiconductor, Inc], MRF281SR1_06 Datasheet

MRF281SR1_06

Manufacturer Part Number

MRF281SR1_06

Description

RF Power Field Effect Transistors

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF281SR1_06.pdf (8 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

applications with frequencies from 1000 to 2500 MHz. Characterized for

operation Class A and Class AB at 26 volts in commercial and industrial

applications.

• Specified Two - Tone Performance @ 1930 and 2000 MHz, 26 Volts

• Capable of Handling 10:1 VSWR, @ 26 Vdc,

Features

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• S - Parameter Characterization at High Bias Levels

• RoHS Compliant

• Available in Tape and Reel. R1 Suffix = 500 Units per

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Table 3. Electrical Characteristics

Off Characteristics

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Drain - Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate - Source Leakage Current

Designed for digital and analog cellular PCN and PCS base station

2000 MHz, 4 Watts CW Output Power

12 mm, 7 inch Reel.

Derate above 25°C

Intermodulation Distortion — - 29 dBc

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Output Power — 4 Watts PEP

Power Gain — 11 dB

Efficiency — 30%

= 0, I

= 28 Vdc, V

= 20 Vdc, V

= 10 μAdc)

= 0)

Characteristic

= 25°C

Characteristic

Rating

= 25°C unless otherwise noted)

Symbol

(BR)DSS

DSS

GSS

Symbol

Min

DSS

—

θJC

stg

LATERAL N - CHANNEL

Document Number: MRF281

CASE 458B - 03, STYLE 1

CASE 458C - 03, STYLE 1

RF POWER MOSFETs

MRF281SR1

MRF281ZR1

2000 MHz, 4 W, 26 V

Typ

—

- 65 to +150

BROADBAND

- 0.5, +65

MRF281SR1

MRF281ZR1

MRF281SR1 MRF281ZR1

Value

0.115

5.74

± 20

150

200

NI - 200S

NI - 200Z

Max

—

Rev. 5, 5/2006

W/°C

°C/W

μAdc

Unit

Vdc

°C

Related parts for MRF281SR1_06

MRF281SR1_06 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications with frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class volts in commercial and industrial applications. • ...

Page 2

Table 3. Electrical Characteristics (T Characteristic On Characteristics Gate Threshold Voltage ( Vdc μAdc Gate Quiescent Voltage ( Vdc mAdc Drain - Source On - Voltage ...

Page 3

Figure 1. Series Equivalent Input and Output Impedance RF Device Data Freescale Semiconductor = 25 Ω 2000 MHz 2000 MHz f = 1500 MHz mA, ...

Page 4

Table 4. Common Source S - Parameters GHz |S | ∠ 0.1 .982 -28 0.2 .947 -52 0.3 .912 -73 0.4 .886 -90 0.5 .859 -103 0.6 .854 -114 0.7 .841 -123 0.8 ...

Page 5

RF Device Data Freescale Semiconductor NOTES MRF281SR1 MRF281ZR1 5 ...

Page 6

MRF281SR1 MRF281ZR1 6 NOTES RF Device Data Freescale Semiconductor ...

Page 7

(INSULATOR bbb ccc (LID SEATING T PLANE A A ...

Page 8

How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 ...

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