MRF377HR3_09 FREESCALE [Freescale Semiconductor, Inc], MRF377HR3_09 Datasheet

MRF377HR3_09

Manufacturer Part Number

MRF377HR3_09

Description

RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF377HR3_09.pdf (14 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field - Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET

cies from 470 to 860 MHz. The high gain and broadband performance of these

devices make them ideal for large- signal, common source amplifier applications

in 32 volt digital television transmitter equipment.

• Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,

• Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Device Designed for Push - Pull Operation Only

• Integrated ESD Protection

• Excellent Thermal Stability

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Drain - Source Voltage

Gate - Source Voltage

Drain Current - Continuous

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

CW Operation @ T

Thermal Resistance, Junction to Case

Designed for broadband commercial and industrial applications with frequen-

Output Power

Derate above 25°C

Case Temperature 81°C, 105 W CW

Case Temperature 77°C, 45 W CW

calculators by product.

Select Documentation/Application Notes - AN1955.

Output Power — 45 Watts Avg.

Power Gain ≥ 16.7 dB

Drain Efficiency ≥ 21%

ACPR ≤ - 58 dBc

Output Power — 80 Watts Avg.

Power Gain ≥ 16.5 dB

Drain Efficiency ≥ 27.5%

IMD ≥ - 31.3 dBc

= 2000 mA, 8K Mode, 64 QAM

= 2000 mA

= 25°C

Characteristic

Rating

″ Nominal.

Symbol

DSS

θJC

stg

470 - 860 MHz, 45 W AVG., 32 V

Document Number: MRF377H

CASE 375G - 04, STYLE 1

MRF377HR3

LATERAL N - CHANNEL

RF POWER MOSFET

- 65 to +150

Value

- 0.5, +65

- 0.5, +15

Value

1.38

0.27

0.29

648

150

200

235

3.7

NI - 860C3

(1,2)

Rev. 2, 3/2009

MRF377HR3

W/°C

°C/W

Unit

Vdc

Adc

°C

Related parts for MRF377HR3_09

MRF377HR3_09 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- cies from 470 to 860 MHz. The high gain and broadband performance of ...

Page 2

Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Table 4. Electrical Characteristics (T Characteristic (1) Off Characteristics (4) Drain - Source Breakdown Voltage ( Vdc, I =10 μ (4) ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Drain Efficiency ( Vdc Avg out DQ Adjacent Channel Power Ratio ( Vdc Avg out DQ (1) Typical ...

Page 4

Table 5. 845 - 875 MHz Narrowband Test Circuit Component Designations and Values Part B1, B2 Ferrite Beads, Surface Mount, 11 Ω (0805) Balun 1, Balun 2 0.8 - 1GHz Xinger Balun Chip Capacitor (0805) C2 2.7 ...

Page 5

TYPICAL NARROWBAND CHARACTERISTICS Vdc DD 16 2000 859.95 MHz 860.05 MHz 16 10 100 P , OUTPUT POWER (WATTS) PEP out Figure ...

Page 6

Figure 7. 845 - 875 MHz Narrowband Series Equivalent Source and Load Impedance MRF377HR3 845 MHz Z load Z source f = 875 MHz f = 845 MHz 2000 mA, P ...

Page 7

Table 6. 470—860 MHz Broadband Test Circuit Component Designations and Values Part B1, B2 Ferrite Beads, Surface Mount, 30 Ω (0603) Balun 1, Balun 2 Rogers 3.006, ε Chip Capacitor (0603) C2 Chip Capacitors ...

Page 8

C20 Balun C21 DS1047 Rev 4 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the ...

Page 9

TYPICAL DVBT OFDM BROADBAND CHARACTERISTICS ACPR 9 420 Vdc Mode OFDM 18.5 64 QAM Data Carrier Modulation 470 MHz 5 Symbols 18 560 ...

Page 10

TYPICAL ATSC 8VSB BROADBAND CHARACTERISTICS η ACPR 9 8 420 Figure 14. Single - Channel ATSC 8VSB 19 18.5 470 MHz 560 MHz 18 660 MHz 17.5 860 ...

Page 11

MHz = 10 Ω Optimized for V Figure 19. 470—860 MHz Broadband Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 860 MHz = 2000 ...

Page 12

(LID (INSULATOR bbb MRF377HR3 12 PACKAGE DIMENSIONS bbb ...

Page 13

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 14

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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