MRF5S19060NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF5S19060NR1_08 Datasheet

MRF5S19060NR1_08

Manufacturer Part Number

MRF5S19060NR1_08

Description

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF5S19060NR1_08.pdf (16 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

f r e q u e n c i e s f r o m 1 9 3 0 t o 1 9 9 0 M H z . T h e h i g h g a i n a n d b r o a d b a n d

performance of these devices make them ideal for large - signal, common -

source amplifier applications in 28 Volt base station equipment.

• Typical 2 - carrier N - CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for broadband commercial and industrial applications with

1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%

Probability on CCDF.

Output Power

Derate above 25°C

Case Temperature 75°C, 12 W CW

out

Power Gain — 14 dB

Drain Efficiency — 23%

IM3 @ 2.5 MHz Offset — - 37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — - 51 dBc in 30 kHz Channel Bandwidth

calculators by product.

Select Documentation/Application Notes - AN1955.

= 12 Watts Avg., 1990 MHz, IS - 95 (Pilot, Sync, Paging, Traffic Codes

= 25°C

Characteristic

Rating

= 28 Volts, I

= 750 mA,

Symbol

DSS

θJC

stg

Document Number: MRF5S19060N

MRF5S19060NR1 MRF5S19060NBR1

1930- 1990 MHz, 12 W AVG., 28 V

MRF5S19060NBR1

MRF5S19060NR1

LATERAL N - CHANNEL

CASE 1486 - 03, STYLE 1

CASE 1484 - 04, STYLE 1

RF POWER MOSFETs

MRF5S19060NBR1

MRF5S19060NR1

- 65 to +175

Value

TO - 270 WB - 4

TO - 272 WB - 4

2 x N - CDMA

- 0.5, +65

- 0.5, +15

Value

218.8

PLASTIC

1.25

0.80

200

(1,2)

Rev. 7, 10/2008

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF5S19060NR1_08

MRF5S19060NR1_08 Summary of contents

Page 1

... Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 Volt base station equipment ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC ...

Page 3

V BIAS INPUT 0.250″ x 0.083″ Microstrip Z2* 0.500″ x 0.083″ Microstrip Z3* 0.500″ x 0.083″ Microstrip Z4* 0.515″ x 0.083″ Microstrip Z5 0.480″ x 1.000″ Microstrip Z6 1.140″ ...

Page 4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will ...

Page 5

V DD 14.4 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9 0.01% Probability (CCDF) 14.2 14 13.8 13.6 1900 Figure Carrier N - CDMA Broadband Performance @ P ...

Page 6

Vdc (Avg.), I = 750 mA DD out DQ −15 Two−Tone Measurements −20 (f1 + f2)/2 = Center Frequency of 1960 MHz −25 3rd Order −30 −35 −40 5th Order −45 7th ...

Page 7

Figure 12. MTTF Factor versus Junction Temperature 100 10 1 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth 0.01 Carriers. ACPR Measured in 30 kHz ...

Page 8

Z Z Figure 15. Series Equivalent Source and Load Impedance MRF5S19060NR1 MRF5S19060NBR1 1990 MHz Z load f = 1930 MHz = 5 Ω Vdc 750 mA ...

Page 9

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF5S19060NR1 MRF5S19060NBR1 9 ...

Page 10

MRF5S19060NR1 MRF5S19060NBR1 10 RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor MRF5S19060NR1 MRF5S19060NBR1 11 ...

Page 12

MRF5S19060NR1 MRF5S19060NBR1 12 RF Device Data Freescale Semiconductor ...

Page 13

RF Device Data Freescale Semiconductor MRF5S19060NR1 MRF5S19060NBR1 13 ...

Page 14

MRF5S19060NR1 MRF5S19060NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 16

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 480- 768- 2130 ...

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