MRF6S19060NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6S19060NR1_08 Datasheet - Page 6

• Manufacturer Part Number: MRF6S19060NR1_08
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF6S19060NR1 MRF6S19060NBR1
19
18
17
16
15
14
13
12
−10
−20
−30
−40
−50
−60
0.1
Figure 7. Intermodulation Distortion Products
Figure 10. Power Gain and Drain Efficiency
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
3rd Order
7th Order
DD
5th Order
1
= 28 Vdc, P
85_C
25_C
T
P
C
out
versus CW Output Power
= −30_C
, OUTPUT POWER (WATTS) CW
versus Tone Spacing
TWO−TONE SPACING (MHz)
out
= 60 W (PEP), I
1
G
ps
10
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
DQ
60
50
40
30
20
10
0
= 610 mA
85_C
V
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2−Carrier N−CDMA, 2.5 MHz Carrier
Spacing, 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
and Drain Efficiency versus Output Power
V
I
f = 1960 MHz
DD
DQ
DD
η
= 28 Vdc, I
= 610 mA
D
= 28 Vdc
TYPICAL CHARACTERISTICS
10
1
P
out
DQ
−30_C
, OUTPUT POWER (WATTS) AVG.
= 610 mA
100
IM3
100
70
60
50
40
30
20
10
0
10
17
16
15
14
13
12
53
51
49
47
45
43
41
39
G
23
0
ps
Figure 11. Power Gain versus Output Power
P1dB = 48.792 dBm (75.72 W)
25_C
85_C
V
Figure 8. Pulse CW Output Power versus
T
η
DD
C
D
−30_C
= −30_C
25
ACPR
= 12 V
85_C
25_C
20
−30_C
P
−30_C
16 V
out
25_C
25_C
85_C
27
, OUTPUT POWER (WATTS) CW
P3dB = 49.503 dBm (89.19 W)
P
100
in
, INPUT POWER (dBm)
−10
−20
−30
−40
−50
−60
−70
Input Power
40
20 V
29
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
DD
= 28 Vdc, I
Freescale Semiconductor
31
24 V
60
DQ
= 610 mA
33
RF Device Data
I
f = 1960 MHz
DQ
28 V
80
= 610 mA
Ideal
35
Actual
32 V
100
37