MRF6S21100NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6S21100NR1_08 Datasheet

MRF6S21100NR1_08

Manufacturer Part Number

MRF6S21100NR1_08

Description

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF6S21100NR1_08.pdf (20 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

t o 2 1 7 0 M H z . S u i t a b l e f o r T D M A , C D M A a n d m u l t i c a r r i e r a m p l i f i e r

applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and

TD-SCDMA applications.

• Typical 2-Carrier W-CDMA Performance: V

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

• 225°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for W-CDMA base station applications with frequencies from 2110

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Output Power

Applications

Case Temperature 80°C, 100 W CW

Case Temperature 73°C, 23 W CW

out

Power Gain — 14.5 dB

Drain

IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth

ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth

calculators by product.

Select Documentation/Application Notes - AN1955.

= 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz,

Efficiency — 25.5%

(1,2)

Characteristic

Rating

Operation

= 28 Volts, I

= 1050 mA,

Symbol

DSS

θJC

stg

Document Number: MRF6S21100N

CASE 1484-04, STYLE 1

CASE 1486-03, STYLE 1

MRF6S21100NR1 MRF6S21100NBR1

2110-2170 MHz, 23 W AVG., 28 V

MRF6S21100NBR1

MRF6S21100NR1

TO-272 WB-4

TO-270 WB-4

LATERAL N-CHANNEL

RF POWER MOSFETs

PLASTIC

-65 to +150

2 x W-CDMA

Value

-0.5, +68

-0.5, +12

Value

0.57

0.66

150

225

(2,3)

Rev. 3, 12/2008

°C/W

Unit

Vdc

°C

Related parts for MRF6S21100NR1_08

MRF6S21100NR1_08 Summary of contents

Page 1

... Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 applications ...

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22-A113, IPC/JEDEC J-STD-020 Table 5. Electrical Characteristics (T Characteristic Off Characteristics ...

Page 3

R1 V BIAS + INPUT Z1, Z10 0.743″ x 0.084″ Microstrip Z2 0.893″ x 0.084″ Microstrip Z3 0.175″ x 0.084″ Microstrip Z4 0.420″ x 0.800″ Microstrip Z5 1.231″ x 0.040″ Microstrip Z6 0.100″ ...

Page 4

MRF6S21100N/NB, Rev. 3 Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout MRF6S21100NR1 MRF6S21100NBR1 C11 C12 C10 RF Device Data Freescale Semiconductor ...

Page 5

D 14.4 14.2 14 13.8 13.6 13.4 13.2 13 2060 2080 Figure 3. 2-Carrier W-CDMA Broadband Performance @ P 14.2 14 η D 13.8 13.6 G 13.4 ps 13.2 IM3 13 12.8 12.6 12.4 12.2 2060 ...

Page 6

Vdc 100 W (PEP) DD out I = 1050 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz - 3rd Order -4 0 5th Order ...

Page 7

This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. ...

Page 8

2110 MHz Z source f = 2170 MHz f = 2170 MHz 2110 MHz load MRF6S21100NR1 Vdc 1050 mA out f Z ...

Page 9

R1 V BIAS + INPUT 1.250″ x 0.084″ Microstrip Z2 0.930″ x 0.084″ Microstrip Z3 0.470″ x 0.800″ Microstrip Z4 0.090″ x 0.800″ Microstrip Z5 1.500″ x 0.040″ Microstrip Z6 0.160″ x ...

Page 10

MRF6S21100N/NB, Rev. 3 Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — TD-SCDMA MRF6S21100NR1 MRF6S21100NBR1 C10 C11 C12 RF Device Data Freescale Semiconductor ...

Page 11

TD-SCDMA 2017.5 MHz - -60 0 Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and -3 0 6-Carrier TD-SCDMA 2017.5 MHz -4 ...

Page 12

MHz Figure 22. Series Equivalent Source and Load Impedance — TD-SCDMA MRF6S21100NR1 MRF6S21100NBR1 Ω 1950 MHz f = 2070 MHz Z load f = 1950 MHz Z source V = ...

Page 13

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21100NR1 MRF6S21100NBR1 13 ...

Page 14

MRF6S21100NR1 MRF6S21100NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 15 ...

Page 16

MRF6S21100NR1 MRF6S21100NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 17 ...

Page 18

MRF6S21100NR1 MRF6S21100NBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting ...

Page 20

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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