MRF6S21100NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6S21100NR1_08 Datasheet

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MRF6S21100NR1_08

Manufacturer Part Number
MRF6S21100NR1_08
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
t o 2 1 7 0 M H z . S u i t a b l e f o r T D M A , C D M A a n d m u l t i c a r r i e r a m p l i f i e r
applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and
TD-SCDMA applications.
• Typical 2-Carrier W-CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• 225°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W-CDMA base station applications with frequencies from 2110
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Case Temperature 80°C, 100 W CW
Case Temperature 73°C, 23 W CW
out
Power Gain — 14.5 dB
Drain
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth
calculators by product.
Select Documentation/Application Notes - AN1955.
= 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz,
Efficiency — 25.5%
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 1050 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Document Number: MRF6S21100N
CASE 1484-04, STYLE 1
CASE 1486-03, STYLE 1
MRF6S21100NR1 MRF6S21100NBR1
2110-2170 MHz, 23 W AVG., 28 V
MRF6S21100NBR1
MRF6S21100NBR1
MRF6S21100NR1
MRF6S21100NR1
TO-272 WB-4
TO-270 WB-4
LATERAL N-CHANNEL
RF POWER MOSFETs
PLASTIC
PLASTIC
-65 to +150
2 x W-CDMA
Value
-0.5, +68
-0.5, +12
Value
0.57
0.66
150
225
(2,3)
Rev. 3, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6S21100NR1_08 Summary of contents

Page 1

... Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 applications ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22-A113, IPC/JEDEC J-STD-020 Table 5. Electrical Characteristics (T Characteristic Off Characteristics ...

Page 3

R1 V BIAS + INPUT Z1, Z10 0.743″ x 0.084″ Microstrip Z2 0.893″ x 0.084″ Microstrip Z3 0.175″ x 0.084″ Microstrip Z4 0.420″ x 0.800″ Microstrip Z5 1.231″ x 0.040″ Microstrip Z6 0.100″ ...

Page 4

MRF6S21100N/NB, Rev. 3 Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout MRF6S21100NR1 MRF6S21100NBR1 C11 C12 C10 RF Device Data Freescale Semiconductor ...

Page 5

D 14.4 14.2 14 13.8 13.6 13.4 13.2 13 2060 2080 Figure 3. 2-Carrier W-CDMA Broadband Performance @ P 14.2 14 η D 13.8 13.6 G 13.4 ps 13.2 IM3 13 12.8 12.6 12.4 12.2 2060 ...

Page 6

Vdc 100 W (PEP) DD out I = 1050 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz - 3rd Order -4 0 5th Order ...

Page 7

This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. ...

Page 8

2110 MHz Z source f = 2170 MHz f = 2170 MHz 2110 MHz load MRF6S21100NR1 Vdc 1050 mA out f Z ...

Page 9

R1 V BIAS + INPUT 1.250″ x 0.084″ Microstrip Z2 0.930″ x 0.084″ Microstrip Z3 0.470″ x 0.800″ Microstrip Z4 0.090″ x 0.800″ Microstrip Z5 1.500″ x 0.040″ Microstrip Z6 0.160″ x ...

Page 10

MRF6S21100N/NB, Rev. 3 Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — TD-SCDMA MRF6S21100NR1 MRF6S21100NBR1 C10 C11 C12 RF Device Data Freescale Semiconductor ...

Page 11

TD-SCDMA 2017.5 MHz - -60 0 Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and -3 0 6-Carrier TD-SCDMA 2017.5 MHz -4 ...

Page 12

MHz Figure 22. Series Equivalent Source and Load Impedance — TD-SCDMA MRF6S21100NR1 MRF6S21100NBR1 Ω 1950 MHz f = 2070 MHz Z load f = 1950 MHz Z source V = ...

Page 13

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21100NR1 MRF6S21100NBR1 13 ...

Page 14

MRF6S21100NR1 MRF6S21100NBR1 14 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 15 ...

Page 16

MRF6S21100NR1 MRF6S21100NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

RF Device Data Freescale Semiconductor MRF6S21100NR1 MRF6S21100NBR1 17 ...

Page 18

MRF6S21100NR1 MRF6S21100NBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting ...

Page 20

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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