MRF6V2300NR1_08 FREESCALE [Freescale Semiconductor, Inc], MRF6V2300NR1_08 Datasheet

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MRF6V2300NR1_08

Manufacturer Part Number
MRF6V2300NR1_08
Description
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed primarily for CW large - signal output and driver applications with
P
Output Power
out
Power Gain — 25.5 dB
Drain Efficiency — 68%
= 300 Watts, f = 220 MHz
DD
= 50 Volts, I
Rating
DQ
= 900 mA,
Symbol
V
V
T
T
DSS
T
GS
stg
C
J
CASE 1486 - 03, STYLE 1
Note: Exposed backside of the package is
RF
RF
Document Number: MRF6V2300N
CASE 1484 - 04, STYLE 1
in
in
MRF6V2300NBR1
/V
/V
MRF6V2300NR1 MRF6V2300NBR1
MRF6V2300NR1
MRF6V2300NR1
MRF6V2300NBR1
Figure 1. Pin Connections
GS
GS
TO - 270 WB - 4
PARTS ARE SINGLE - ENDED
10 - 600 MHz, 300 W, 50 V
the source terminal for the transistor.
TO - 272 WB - 4
LATERAL N - CHANNEL
RF POWER MOSFETs
PLASTIC
PLASTIC
SINGLE - ENDED
BROADBAND
- 65 to +150
- 0.5, +110
- 0.5, +10
Value
(Top View)
150
200
Rev. 3, 1/2008
RF
RF
out
out
Unit
Vdc
Vdc
°C
°C
°C
/V
/V
DS
DS
1

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MRF6V2300NR1_08 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance: V ...

Page 2

Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 83°C, 300 W CW Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per ...

Page 3

B1 V BIAS + + + C10 RF INPUT C12 C13 Z1 0.352″ x 0.082″ Microstrip Z2 1.567″ x 0.082″ Microstrip Z3 0.857″ x 0.082″ Microstrip Z4 0.276″ x ...

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C10 C11 C12 C13 * Stacked Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout MRF6V2300NR1 MRF6V2300NBR1 4 C4 C19 C5 C18 C6 C17 R1 B2 C15* C8 C16 C20 L2 ...

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C iss C 100 oss Measured with ±30 mV(rms) MHz Vdc rss DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 4. Capacitance versus Drain - Source Voltage ...

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100 150 200 250 P , OUTPUT POWER (WATTS) CW out Figure 10. Power Gain versus Output Power 29 ...

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Figure 14. MTTF versus Junction Temperature RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF ...

Page 8

Figure 15. Series Equivalent Source and Load Impedance MRF6V2300NR1 MRF6V2300NBR1 8 Z source f = 220 MHz = 5 Ω load f = 220 MHz Vdc 900 mA 300 W ...

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RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6V2300NR1 MRF6V2300NBR1 9 ...

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MRF6V2300NR1 MRF6V2300NBR1 10 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 11 ...

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MRF6V2300NR1 MRF6V2300NBR1 12 RF Device Data Freescale Semiconductor ...

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RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 13 ...

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MRF6V2300NR1 MRF6V2300NBR1 14 RF Device Data Freescale Semiconductor ...

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Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting ...

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How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800- 521- 6274 480- 768- 2130 ...

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