MRF7S15100HR3_09 FREESCALE [Freescale Semiconductor, Inc], MRF7S15100HR3_09 Datasheet

MRF7S15100HR3_09

Manufacturer Part Number

MRF7S15100HR3_09

Description

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF7S15100HR3_09.pdf (13 pages)

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RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

1510 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulations.

• Typical Single - Carrier W - CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1490 MHz, 100 Watts CW

• Typical P

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate - Source Voltage Range for Improved Class C

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Freescale Semiconductor

Technical Data

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain - Source Voltage

Gate - Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

CW Operation @ T

Thermal Resistance, Junction to Case

Designed for CDMA base station applications with frequencies from 1470 to

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

600 mA, P

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

Output Power

Operation

Derate above 25°C

Case Temperature 80°C, 55 W CW

Case Temperature 77°C, 23 W CW

Power Gain — 19.5 dB

Drain Efficiency — 32%

Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — - 38 dBc in 3.84 MHz Channel Bandwidth

calculators by product.

Select Documentation/Application Notes - AN1955.

out

@ 1 dB Compression Point ' 100 Watts CW

= 23 Watts Avg., f = 1507.5 MHz, IQ Magnitude Clipping,

= 25°C

(1,2)

Characteristic

Rating

= 28 Volts, I

Symbol

DSS

θJC

stg

Document Number: MRF7S15100H

CASE 465 - 06, STYLE 1

CASE 465A - 06, STYLE 1

MRF7S15100HR3 MRF7S15100HSR3

1470 - 1510 MHz, 23 W AVG., 28 V

MRF7S15100HSR3

MRF7S15100HR3

MRF7S1500HR3

MRF7S1500HSR3

LATERAL N - CHANNEL

RF POWER MOSFETs

NI - 780

NI - 780S

SINGLE W - CDMA

- 65 to +150

Value

- 0.5, +65

- 6.0, +10

32, +0

Value

0.36

0.65

0.74

150

225

(2,3)

Rev. 2, 6/2009

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF7S15100HR3_09

MRF7S15100HR3_09 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1470 to 1510 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: V 600 mA Watts Avg ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Table 4. Electrical Characteristics (T Characteristic Off Characteristics Zero Gate Voltage Drain Leakage ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system Compression Point, CW out IMD Symmetry @ 90 W PEP, P where IMD Third Order out ` Intermodulation 30 dBc ...

Page 4

V BIAS RF C2 INPUT 0.084″ x 0.078″ Microstrip Z2 0.149″ x 0.153″ Microstrip Z3 0.149″ x 0.303″ Microstrip Z4 0.149″ x 0.065″ Microstrip Z5 0.084″ x 0.146″ Microstrip Z6 0.084″ ...

Page 5

MRF7S15100H/HS Rev. 3 Figure 2. MRF7S15100HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C11 C9 C10 C6 C12 C13 C7 MRF7S15100HR3 MRF7S15100HSR3 5 ...

Page 6

Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ 900 750 mA 600 mA 18 450 ...

Page 7

V Single−Carrier W−CDMA, 3.84 MHz 20 Channel Bandwidth Figure 7. Single - Carrier W - CDMA Power Gain, Drain 1150 ...

Page 8

Input Signal 0.1 0.01 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) ...

Page 9

Figure 12. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω load f = 1570 MHz f = 1410 MHz f = 1570 MHz f = 1410 MHz Z source V = ...

Page 10

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF7S15100HR3 MRF7S15100HSR3 10 Ideal P3dB = 51.63 dBm ...

Page 11

(FLANGE) D bbb (FLANGE (FLANGE (FLANGE) D bbb ...

Page 12

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • ...

Page 13

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800 - 521 - 6274 480 ...

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