MRF7S19120NR1_09 FREESCALE [Freescale Semiconductor, Inc], MRF7S19120NR1_09 Datasheet

MRF7S19120NR1_09

Manufacturer Part Number

MRF7S19120NR1_09

Description

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRF7S19120NR1_09.pdf (14 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

1990 MHz. Can be used in Class AB and Class C for all typical cellular base

station modulation formats.

• Typical Single-Carrier W-CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW

• P

Features

• 100% PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate-Source Voltage Range for Improved Class C

• Designed for Digital Predistortion Error Correction Systems

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for CDMA base station applications with frequencies from 1930 to

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

1200 mA, P

Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @

0.01% Probability on CCDF.

Output Power

Operation

Case Temperature 81°C, 120 W CW

Case Temperature 80°C, 36 W CW

out

Power Gain — 18 dB

Drain Efficiency — 32%

Device Output Signal PAR — 6.1 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset — -38.5 dBc in 3.84 MHz Channel Bandwidth

calculators by product.

Select Documentation/Application Notes - AN1955.

@ 1 dB Compression Point w 120 W CW

out

= 36 Watts Avg., Full Frequency Band, IQ Magnitude

(1,2)

Characteristic

Rating

= 28 Volts, I

Symbol

DSS

θJC

stg

Document Number: MRF7S19120N

1930-1990 MHz, 36 W AVG., 28 V

MRF7S19120NR1

LATERAL N-CHANNEL

RF POWER MOSFET

SINGLE W-CDMA

-65 to +150

TO-270 WBL-4

CASE 1730-02

Value

-0.5, +65

-6.0, +10

32, +0

Value

PLASTIC

0.43

0.51

150

225

(2,3)

MRF7S19120NR1

Rev. 2, 12/2009

°C/W

Unit

Vdc

°C

Related parts for MRF7S19120NR1_09

MRF7S19120NR1_09 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22-A113, IPC/JEDEC J-STD-020 Table 5. Electrical Characteristics (T Characteristic Off Characteristics ...

Page 3

Table 5. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system) V Video Bandwidth @ 120 W PEP P where IM3 = -30 dBc out (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ ...

Page 4

V BIAS INPUT 0.084″ x 0.744″ Microstrip Z2 0.084″ x 0.797″ Microstrip Z3 0.362″ x 0.100″ Microstrip Z4 0.612″ x 0.380″ Microstrip Z5 1.000″ x 0.125″ Microstrip Z6 1.000″ x ...

Page 5

MRF7S19120N Rev. 3 Figure 2. MRF7S19120NR1 Test Circuit Component Layout RF Device Data Freescale Semiconductor C10 C11 MRF7S19120NR1 5 ...

Page 6

Figure 3. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ P 17.6 η 17.4 17.2 17 16.8 16.6 16.4 16.2 16 15.8 15.6 1880 Figure 4. Output Peak-to-Average ...

Page 7

Vdc 1200 1955 MHz 1965 MHz -20 Two-Tone Measurements, 10 MHz Tone Spacing -30 -40 3rd Order 5th Order -50 7th Order - ...

Page 8

120 P , OUTPUT POWER (WATTS) CW out Figure 12. Power Gain versus Output Power 100 10 1 Input Signal 0.1 0.01 W-CDMA. ACPR Measured ...

Page 9

Figure 16. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 2040 MHz Z load f = 1880 MHz f = 2040 MHz Z source f = 1880 MHz Vdc 1200 ...

Page 10

MRF7S19120NR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor MRF7S19120NR1 11 ...

Page 12

MRF7S19120NR1 12 RF Device Data Freescale Semiconductor ...

Page 13

PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers ...

Page 14

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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