MRF8P9300HR6_10 FREESCALE [Freescale Semiconductor, Inc], MRF8P9300HR6_10 Datasheet

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MRF8P9300HR6_10

Manufacturer Part Number
MRF8P9300HR6_10
Description
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 425 Watts CW
• Typical P
880 MHz
• Typical Single--Carrier W--CDMA Performance: V
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for CDMA and multicarrier GSM base station applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2400 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Enhanced Ruggedness
2400 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
and Common Source S--Parameters
calculators by product.
Frequency
Frequency
920 MHz
940 MHz
960 MHz
865 MHz
880 MHz
895 MHz
out
out
out
@ 1 dB Compression Point ≃ 326 Watts CW
= 100 Watts Avg., IQ Magnitude Clipping, Channel
= 100 Watts Avg., IQ Magnitude Clipping, Channel
(dB)
19.6
19.6
19.4
(dB)
20.5
20.7
20.6
G
G
ps
ps
(1,2)
Rating
35.4
35.6
35.8
35.2
36.0
37.0
(%)
(%)
η
η
D
D
Output PAR
Output PAR
(dB)
(dB)
DD
6.0
6.0
5.9
DD
6.0
6.0
6.0
out
= 28 Volts, I
), Designed for
= 28 Volts, I
ACPR
ACPR
(dBc)
(dBc)
--37.3
--37.1
--36.7
--36.1
--36.1
--35.8
DQ
DQ
=
=
Symbol
V
V
V
T
T
DSS
T
stg
GS
DD
C
J
CASE 375D- -05, STYLE 1
RF
RF
CASE 375E- -04, STYLE 1
Document Number: MRF8P9300H
inA
inB
920- -960 MHz, 100 W AVG., 28 V
MRF8P9300HSR6
MRF8P9300HR6
MRF8P9300HSR6
/V
/V
MRF8P9300HR6 MRF8P9300HSR6
MRF8P9300HR6
GSA
GSB
Figure 1. Pin Connections
LATERAL N- -CHANNEL
NI- -1230
NI- -1230S
RF POWER MOSFETs
SINGLE W- -CDMA
3
4
--65 to +150
--0.5, +70
--6.0, +10
32, +0
Value
(Top View)
150
225
Rev. 1.1, 7/2010
1
2 RF
RF
outA
outB
Unit
Vdc
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1

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MRF8P9300HR6_10 Summary of contents

Page 1

... Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. ...

Page 2

Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 100 W CW, 28 Vdc, I Case Temperature 80°C, 300 W CW, 28 Vdc, I Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) ...

Page 3

Table 4. Electrical Characteristics (T Characteristic Typical Performances (In Freescale Test Fixture, 50 ohm system Compression Point, CW out IMD Symmetry @ 310 W PEP, P where IMD Third Order out Intermodulation  30 dBc ...

Page 4

C21 C20 *C10, C11, C12, and C13 are mounted vertically. Figure 2. MRF8P9300HR6(HSR6) Test Circuit Component Layout Table 5. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values Part B1, B2 ...

Page 5

RF Device Data Freescale Semiconductor Devices are tested in a parallel configuration Single--ended λ λ Quadrature combined 4 4 λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies ...

Page 6

IRL 820 Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ P -- Two--Tone Measurements --20 (f1 + f2)/2 = Center Frequency of 940 MHz --30 --40 ...

Page 7

Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain --5 --10 --15 600 100 10 1 Input Signal 0.1 0.01 W--CDMA. ACPR Measured in 3.84 MHz ...

Page 8

Figure 11. Series Equivalent Source and Load Impedance MRF8P9300HR6 MRF8P9300HSR6 Vdc 1200 mA 100 W Avg. DD DQA DQB out source load MHz Ω Ω 840 1.74 ...

Page 9

ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ Device Data Freescale Semiconductor ...

Page 10

B2 C22 C21 B1 Figure 13. MRF8P9300HR6(HSR6) Test Circuit Component Layout — 865- -895 MHz Table 6. MRF8P9300HR6(HSR6) Test Circuit Component Designations and Values — 865- -895 MHz Part B1 C3, ...

Page 11

TYPICAL CHARACTERISTICS — 865- -895 MHz 20.5 20 19.5 19 IRL 18.5 18 17.5 17 820 Figure 14. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ ...

Page 12

Figure 17. Series Equivalent Source and Load Impedance — 865- -895 MHz MRF8P9300HR6 MRF8P9300HSR6 Vdc 2400 mA 100 W Avg out source load MHz Ω Ω 820 ...

Page 13

RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8P9300HR6 MRF8P9300HSR6 13 ...

Page 14

MRF8P9300HR6 MRF8P9300HSR6 14 RF Device Data Freescale Semiconductor ...

Page 15

RF Device Data Freescale Semiconductor MRF8P9300HR6 MRF8P9300HSR6 15 ...

Page 16

MRF8P9300HR6 MRF8P9300HSR6 16 RF Device Data Freescale Semiconductor ...

Page 17

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration ...

Page 18

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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