MRF8S18210WGHSR3 FREESCALE [Freescale Semiconductor, Inc], MRF8S18210WGHSR3 Datasheet

no-image

MRF8S18210WGHSR3

Manufacturer Part Number
MRF8S18210WGHSR3
Description
RF Power Field Effect Transistors
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF8S18210WGHSR3
Manufacturer:
FREESCALE
Quantity:
1 400
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
to 1995 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 1840 MHz, 268 Watts CW
• Typical P
1800 MHz
• Typical Single--Carrier W--CDMA Performance: V
Features
• Designed for Wide Instantaneous Bandwidth Applications
• Designed for Wideband Applications that Require 40 MHz Signal Bandwidth
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Designed for CDMA base station applications with frequencies from1805 MHz
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
1300 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
1300 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability
on CCDF.
and Common Source S--Parameters
For R5 Tape and Reel option, see p. 17.
Derate above 25°C
calculators by product.
Frequency
Frequency
1930 MHz
1960 MHz
1995 MHz
1805 MHz
1840 MHz
1880 MHz
out
out
out
@ 1 dB Compression Point ≃ 210 Watts CW
= 50 Watts Avg., IQ Magnitude Clipping, Channel
= 50 Watts Avg., IQ Magnitude Clipping, Channel
C
= 25°C
(dB)
17.8
17.8
18.1
G
(dB)
18.2
18.1
18.2
G
ps
ps
(2,3)
Rating
29.2
28.2
27.6
30.1
29.1
27.8
(%)
(%)
η
η
D
D
Output PAR
Output PAR
(dB)
(dB)
DD
DD
7.0
7.0
7.1
7.3
7.4
7.4
out
= 30 Volts, I
)
= 30 Volts, I
ACPR
ACPR
(dBc)
--34.2
--34.4
--34.3
(dBc)
--35.1
--35.4
--35.9
DQ
DQ
=
=
(1)
MRF8S18210WHSR3 MRF8S18210WGHSR3
Document Number: MRF8S18210WHS
Symbol
V
V
V
CW
T
T
DSS
T
GS
DD
stg
MRF8S18210WGHSR3
C
J
MRF8S18210WHSR3
RF
in
MRF8S18210WHSR3
MRF8S18210WGHSR3
/V
Figure 1. Pin Connections
NI- -880XS- -2 GULL
GS
LATERAL N- -CHANNEL
NI- -880XS- -2
RF POWER MOSFETs
1805 MHz - - 1995 MHz
2
SINGLE W- -CDMA
50 W AVG., 30 V
--65 to +150
--0.5, +65
--6.0, +10
(Top View)
32, +0
Value
1.44
125
225
239
Rev. 0, 4/2012
1
RF
out
W/°C
Unit
Vdc
Vdc
Vdc
°C
°C
°C
/V
W
DS
1

Related parts for MRF8S18210WGHSR3

MRF8S18210WGHSR3 Summary of contents

Page 1

... MRF8S18210WHSR3 NI- -880XS- -2 GULL MRF8S18210WGHSR3 out (Top View) Figure 1. Pin Connections Symbol Value V --0.5, +65 DSS V --6. --65 to +150 stg T 125 C T 225 J CW 239 1.44 MRF8S18210WHSR3 MRF8S18210WGHSR3 /V DS Unit Vdc Vdc Vdc °C °C °C W W/°C 1 ...

Page 2

... Select Documentation/Application Notes -- AN1955. 3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table. 4. Part internally matched both on input and output. 5. Measurement made with device in straight lead configuration before any lead forming operation is applied. MRF8S18210WHSR3 MRF8S18210WGHSR3 2 = 1300 mA, 1840 MHz Vdc, I ...

Page 3

... G ps (dB) 18.2 18.1 18.2 Min Typ Max Unit — 210 — MHz — 12 — — 100 — MHz — 0.14 — — 0.02 — dB/°C — 0.008 — dB/° Vdc 1300 mA Output PAR ACPR η D (%) (dB) (dBc) (dB) 30.1 7.3 --35.1 29.1 7.4 --35.4 27.8 7.4 --35.9 MRF8S18210WHSR3 MRF8S18210WGHSR3 out IRL --10 --9 --10 3 ...

Page 4

... Chip Capacitor C16, C21 1.8 pF Chip Capacitors C17 2.0 pF Chip Capacitor C18, C19 3.9 pF Chip Capacitors C20 1.0 pF Chip Capacitor C22 470 μ Electrolytic Capacitor R1 Ω, 1/4 W Chip Resistors PCB 0.020″, ε r MRF8S18210WHSR3 MRF8S18210WGHSR3 4 C3 C11 C12* C10 C4 Description = 3.5 C22 C7 C5 C13* ...

Page 5

... OUTPUT POWER (WATTS) out Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --31 --2.8 --32 0 --33 --3 --10 --34 --3.2 --20 --35 --3.4 --30 --36 --3.6 --40 --37 --3.8 --50 2020 2040 100 300 -- --25 50 --30 η -- --40 30 --45 PARC 20 -- 110 MRF8S18210WHSR3 MRF8S18210WGHSR3 5 ...

Page 6

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 9 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 8. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S18210WHSR3 MRF8S18210WGHSR3 6 TYPICAL CHARACTERISTICS = 30 Vdc 1300 mA, Single--Carrier DD DQ 1995 MHz 1960 MHz 1930 MHz 1995 MHz 1960 MHz ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Network Test Z Z source load Output Matching Network MRF8S18210WHSR3 MRF8S18210WGHSR3 7 ...

Page 8

... Load impedance for optimum P1dB efficiency Impedance as measured from gate contact to ground. source Z = Impedance as measured from drain contact to ground. load Figure 12. Load Pull Performance — Maximum Drain Efficiency Tuning MRF8S18210WHSR3 MRF8S18210WGHSR3 Vdc 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle DQ Max Output Power P1dB (1) ...

Page 9

... C19 R2 C12* C4 Description = 3.5 C24 C7 C5 C13* C23 C22 C20* C21* C14 MRF8S18210HS/B Rev. 0 Part Number Manufacturer C3225X7R2A225M TDK C5750X7S2A106MT TDK ATC100B8R2BT500XT ATC ATC100B10R0BT500XT ATC ATC100B2R2BT500XT ATC ATC100B0R8BT500XT ATC ATC100B3R9BT500XT ATC ATC100B1R8BT500XT ATC B41858-C8477-M000 EPCOS 232272461009 Phycomp RO4350B Rogers MRF8S18210WHSR3 MRF8S18210WGHSR3 9 ...

Page 10

... Input Signal PAR = 9 0.01% Probability on CCDF Figure 15. Single- -Carrier W- -CDMA Power Gain, Drain 1600 MRF8S18210WHSR3 MRF8S18210WGHSR3 Vdc (Avg.), I = 1300 mA DD out DQ Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 9 0.01% Probability on CCDF η D ACPR G ps IRL ...

Page 11

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Under Matching Network Test Z Z source load Output Matching Network MRF8S18210WHSR3 MRF8S18210WGHSR3 11 ...

Page 12

... Impedance as measured from gate contact to ground. source Z = Impedance as measured from drain contact to ground. load Figure 19. Load Pull Performance — Maximum Drain Efficiency Tuning — 1805 MHz - - 1880 MHz MRF8S18210WHSR3 MRF8S18210WGHSR3 Vdc 1300 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle DQ Max Output Power ...

Page 13

... RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MRF8S18210WHSR3 MRF8S18210WGHSR3 13 ...

Page 14

... MRF8S18210WHSR3 MRF8S18210WGHSR3 14 RF Device Data Freescale Semiconductor, Inc. ...

Page 15

... RF Device Data Freescale Semiconductor, Inc. MRF8S18210WHSR3 MRF8S18210WGHSR3 15 ...

Page 16

... MRF8S18210WHSR3 MRF8S18210WGHSR3 16 RF Device Data Freescale Semiconductor, Inc. ...

Page 17

... R5 tape and reel option will be offered MRF8S18210WHS and MRF8S18210WGHS in the R3 tape and reel option. The following table summarizes revisions to this document. Revision Date 0 Apr. 2012 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor, Inc. R5 TAPE AND REEL OPTION REVISION HISTORY Description MRF8S18210WHSR3 MRF8S18210WGHSR3 17 ...

Page 18

... How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support MRF8S18210WHSR3 MRF8S18210WGHSR3 Document Number: MRF8S18210WHS Rev. 0, 4/2012 18 Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document ...

Related keywords