MRF8S9202N FREESCALE [Freescale Semiconductor, Inc], MRF8S9202N Datasheet

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MRF8S9202N

Manufacturer Part Number
MRF8S9202N
Description
RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet

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Part Number:
MRF8S9202NR3
Manufacturer:
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© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 7:1 VSWR, @ 32 Vdc, 920 MHz, 290 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 2. Thermal Characteristics
Table 1. Maximum Ratings
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 920 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1300 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Enhanced Ruggedness.
and Common Source S--Parameters
Case Temperature 80°C, 58 W CW, 28 Vdc, I
Case Temperature 90°C, 200 W CW, 28 Vdc, I
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
920 MHz
940 MHz
960 MHz
out
out
@ 1 dB Compression Point ≃ 200 Watts CW
= 58 Watts Avg., IQ Magnitude Clipping, Channel
(dB)
19.0
19.1
18.9
G
ps
(1,2)
Characteristic
Rating
36.3
37.2
37.3
(%)
η
D
DQ
DQ
= 1300 mA, 920 MHz
Output PAR
= 1300 mA, 920 MHz
(dB)
DD
6.3
6.2
6.1
out
= 28 Volts, I
). Designed for
ACPR
(dBc)
--38.2
--38.0
--37.1
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF8S9202N
920- -960 MHz, 58 W AVG., 28 V
MRF8S9202NR3
LATERAL N- -CHANNEL
CASE 2021- -03, STYLE 1
RF POWER MOSFET
SINGLE W- -CDMA
--65 to +150
Value
--0.5, +70
--6.0, +10
32, +0
OM- -780- -2
Value
PLASTIC
0.31
0.27
150
225
(2,3)
Rev. 0, 12/2010
MRF8S9202NR3
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF8S9202N Summary of contents

Page 1

... Designed for out = 1300 mA, 920 MHz DQ = 1300 mA, 920 MHz DQ Document Number: MRF8S9202N Rev. 0, 12/2010 MRF8S9202NR3 920- -960 MHz AVG SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFET CASE 2021- -03, STYLE 1 OM- -780- -2 PLASTIC Symbol Value Unit V --0.5, +70 Vdc DSS V --6 ...

Page 2

... Frequency 920 MHz 940 MHz 960 MHz Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF8S9202NR3 2 Rating 3 = 25°C unless otherwise noted) Symbol I DSS I DSS I ...

Page 3

... Vdc P1dB IMD sym VBW res = 58 W Avg. G out F ∆G ∆P1dB Min Typ Max = 1300 mA, 920--960 MHz Bandwidth — 200 — — 7.5 — — 70 — — 0.3 — — 0.02 — — 0.006 — MRF8S9202NR3 Unit W MHz MHz dB dB/°C dB/°C 3 ...

Page 4

... MRF8S9202N Rev. 0 Figure 1. MRF8S9202NR3 Test Circuit Component Layout Table 6. MRF8S9202NR3 Test Circuit Component Designations and Values Part C1, C2 220 μ Electrolytic Capacitors C3, C4, C5, C6 μ Chip Capacitors C8 2.7 pF Chip Capacitor C9, C10, C11, C12 47 pF Chip Capacitors C13, C14 1 ...

Page 5

... Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power 45 40 η --36 --0.6 --4 ACPR --38 --0.8 --8 --40 --1 --12 IRL --42 --1.2 --16 --44 --1.4 --20 PARC --46 --1.6 --24 960 980 IM3--U 100 -- --25 ACPR 50 --30 η --40 30 PARC --45 20 --50 10 110 130 MRF8S9202NR3 5 ...

Page 6

... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 7. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal MRF8S9202NR3 6 TYPICAL CHARACTERISTICS = 28 Vdc 1300 mA, Single--Carrier η D ACPR 960 MHz 940 MHz ...

Page 7

... MHz Ω Ω 820 1.46 -- j3.27 2.14 -- j2.57 840 1.62 -- j3.12 2.08 -- j2.30 860 1.80 -- j3.01 2.05 -- j2.05 880 2.00 -- j2.95 2.05 -- j1.82 900 2.20 -- j2.95 2.06 -- j1.60 920 2.38 -- j3.00 2.09 -- j1.38 940 2.52 -- j3.12 2.14 -- j1.18 960 2.62 -- j3.29 2.21 -- j0.98 980 2.63 -- j3.49 2.30 -- j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured from load drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF8S9202NR3 7 ...

Page 8

... ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS V 60.5 59 57.5 56 54.5 53 51.5 50 48 NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V MRF8S9202NR3 Vdc 1150 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle DD DQ 920 MHz 920 MHz 960 MHz 940 MHz 28.5 30 31.5 33 34.5 36 37.5 39 40.5 ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF8S9202NR3 9 ...

Page 10

... MRF8S9202NR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8S9202NR3 11 ...

Page 12

... For Software Part Number search at http://www.freescale.com, and select the “Part Number” link the Software & Tools tab on the part’s Product Summary page to download the respective tool. The following table summarizes revisions to this document. Revision Date 0 Dec. 2010 • Initial Release of Data Sheet MRF8S9202NR3 12 REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 13

... Freescale Semiconductor Literature Distribution Center 1--800--441--2447 or +1--303--675--2140 Fax: +1--303--675--2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF8S9202N Rev. 0, 12/2010 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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