MRFE6P3300HR3_09 FREESCALE [Freescale Semiconductor, Inc], MRFE6P3300HR3_09 Datasheet

MRFE6P3300HR3_09

Manufacturer Part Number

MRFE6P3300HR3_09

Description

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRFE6P3300HR3_09.pdf (12 pages)

Current page: 1 of 12
Download datasheet (452Kb)

RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

frequencies from 470 to 860 MHz. The high gain and broadband performance

of this device make it ideal for large- signal, common- source amplifier

applications in 32 volt analog or digital television transmitter equipment.

• Typical Narrowband Two-T one Performance @ 860 MHz: V

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive,

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Designed for Push-Pull Operation Only

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for broadband commercial and industrial applications with

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Designed for Enhanced Ruggedness

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Case Temperature 80°C, 300 W CW

Case Temperature 82°C, 220 W CW

Case Temperature 79°C, 100 W CW

Case Temperature 81°C, 60 W CW

Power Gain — 20.4 dB

Drain

IMD — -28.8 dBc

calculators by product.

Select Documentation/Application Notes - AN1955.

= 1600 mA, P

Efficiency — 44.8%

out

= 270 Watts PEP

(1,2)

Characteristic

Rating

Operation

= 32 Volts,

Symbol

DSS

θJC

stg

Document Number: MRFE6P3300H

MRFE6P3300HR3

CASE 375G-04, STYLE 1

LATERAL N-CHANNEL

860 MHz, 300 W, 32 V

RF POWER MOSFET

-65 to +150

Value

-0.5, +66

-0.5, +12

Value

NI-860C3

0.23

0.24

0.27

150

225

(2,3)

MRFE6P3300HR3

Rev. 2, 12/2009

°C/W

Unit

Vdc

°C

Related parts for MRFE6P3300HR3_09

MRFE6P3300HR3_09 Summary of contents

Page 1

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Table 4. Electrical Characteristics (T Characteristic (1) Off Characteristics Zero Gate Voltage Drain Leakage Current ( Vdc, ...

Page 3

V BIAS + COAX1 RF INPUT COAX2 V BIAS + 0.401″ x 0.081″ Microstrip Z2, Z3 0.563″ x 0.101″ Microstrip Z4, Z5 1.186″ x 0.058″ Microstrip Z6, Z7 0.416″ x 0.727″ ...

Page 4

COAX1 C4 C5 COAX2 Figure 2. 820-900 MHz Narrowband Test Circuit Component Layout MRFE6P3300HR3 4 C23 C14 C12 C6 C10 C11 C13 C24 C15 C18 ...

Page 5

TYPICAL NARROWBAND CHARACTERISTICS 21 20.5 20 19.5 19 18.5 18 ACP-L 17.5 17 820 830 Figure 3. Single-Carrier OFDM Broadband Performance 20 18.5 18 17.5 17 16.5 820 830 Figure 4. Single-Carrier OFDM Broadband Performance ...

Page 6

TYPICAL NARROWBAND CHARACTERISTICS - Vdc 1600 857 MHz 863 MHz -2 0 Two-Tone Measurements, 6 MHz Tone Spacing - 5th Order -5 0 3rd ...

Page 7

TYPICAL NARROWBAND CHARACTERISTICS - 25_C 19 85_C 18 17 η 860 MHz OUTPUT POWER (WATTS) CW out Figure ...

Page 8

Mode DVTB OFDM 64 QAM Data Carrier Modulation 0.01 5 Symbols 0.001 0.0001 PEAK-T O-A VERAGE (dB) Figure 14. Single-Carrier DVTB OFDM MRFE6P3300HR3 8 DIGITAL TEST SIGNALS - ...

Page 9

Z o Figure 16. 820-900 MHz Narrowband Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor f = 890 MHz Z load f = 830 MHz = 10 Ω 890 MHz f = 830 MHz Z ...

Page 10

(LID (INSULATOR bbb bbb M ccc E H (INSULATOR) bbb A MRFE6P3300HR3 10 PACKAGE DIMENSIONS ...

Page 11

Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this ...

Page 12

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

Related keywords

MRFE6P3300HR3_09 datasheet
MRFE6P3300HR3_09 data sheet
MRFE6P3300HR3_09 pdf datasheet
MRFE6P3300HR3_09 component
MRFE6P3300HR3_09 part
MRFE6P3300HR3_09 distributor
MRFE6P3300HR3_09 RoHS
MRFE6P3300HR3_09 datasheet download