MRFE6VP5600HR6_11 FREESCALE [Freescale Semiconductor, Inc], MRFE6VP5600HR6_11 Datasheet

MRFE6VP5600HR6_11

Manufacturer Part Number

MRFE6VP5600HR6_11

Description

RF Power Field Effect Transistors

Manufacturer

FREESCALE [Freescale Semiconductor, Inc]

Datasheet

1.MRFE6VP5600HR6_11.pdf (13 pages)

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RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

(including laser and plasma exciters), broadcast (analog and digital), aerospace

and radio/land mobile applications. They are unmatched input and output

designs allowing wide frequency range utilization, between 1.8 and 600 MHz.

• Typical Performance: V

• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,

Features

• Unmatched Input and Output Allowing Wide Frequency Range Utilization

• Device can be used Single--Ended or in a Push--Pull Configuration

• Qualified Up to a Maximum of 50 V

• Characterized from 30 V to 50 V for Extended Power Range

• Suitable for Linear Application with Appropriate Biasing

• Integrated ESD Protection with Greater Negative Gate--Source Voltage

• Characterized with Series Equivalent Large--Signal Impedance Parameters

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain--Source Voltage

Gate--Source Voltage

Storage Temperature Range

Case Operating Temperature

Total Device Dissipation @ T

Operating Junction Temperature

Thermal Resistance, Junction to Case

These high ruggedness devices are designed for use in high VSWR industrial

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness

Range for Improved Class C Operation

For R5 Tape and Reel options, see p. 12.

• 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec

Derate above 25°C

Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz

Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz

Pulsed (100 μsec,

MTTF calculators by product.

Select Documentation/Application Notes -- AN1955.

20% Duty Cycle)

Signal Type

Rating

600 Peak

600 Avg.

(W)

out

= 25°C

= 50 Volts, I

(1,2)

(MHz)

230

Operation

Characteristic

= 100 mA

Symbol

DSS

stg

(dB)

25.0

24.6

-- 65 to +150

--0.5, +130

--6.0, +10

74.6

75.2

(%)

Value

1667

8.33

150

225

(dB)

IRL

--18

--17

W/°C

Unit

Vdc

°C

Document Number: MRFE6VP5600H

MRFE6VP5600HR6 MRFE6VP5600HSR6

CASE 375E- -04, STYLE 1

CASE 375D- -05, STYLE 1

MRFE6VP5600HSR6

MRFE6VP5600HR6

MRFE6VP5600HSR6

MRFE6VP5600HR6

1.8- -600 MHz, 600 W CW, 50 V

Figure 1. Pin Connections

LATERAL N- -CHANNEL

PARTS ARE PUSH- -PULL

RF POWER MOSFETs

NI- -1230S

NI- -1230

BROADBAND

Symbol

(Top View)

θJC

Value

Rev. 1, 1/2011

0.022

0.12

2 RF

(2,3)

out

°C/W

Unit

Related parts for MRFE6VP5600HR6_11

MRFE6VP5600HR6_11 Summary of contents

Page 1

... D 8.33 W/°C T 225 °C J Characteristic Document Number: MRFE6VP5600H Rev. 1, 1/2011 MRFE6VP5600HR6 MRFE6VP5600HSR6 1.8- -600 MHz, 600 W CW LATERAL N- -CHANNEL BROADBAND RF POWER MOSFETs CASE 375D- -05, STYLE 1 NI- -1230 MRFE6VP5600HR6 CASE 375E- -04, STYLE 1 NI- -1230S MRFE6VP5600HSR6 PARTS ARE PUSH- -PULL ...

Page 2

Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Table 4. Electrical Characteristics (T Characteristic (1) Off Characteristics Gate--Source Leakage Current ( Vdc ...

Page 3

V BIAS COAX1 INPUT COAX2 V BIAS DUT Z1 0.192″ x 0.082″ Microstrip Z2 0.175″ x 0.082″ Microstrip Z3, Z4 0.170″ x 0.100″ Microstrip Z5, Z6 0.116″ x 0.285″ Microstrip ...

Page 4

C10 C11 C12 C13 COAX1 COAX2 Figure 2. MRFE6VP5600HR6(HSR6) Test Circuit Component Layout - - Pulsed Table 5. MRFE6VP5600HR6(HSR6) Test Circuit Component Designations and Values - - Pulsed Part C1 ...

Page 5

Measured with ±30 mV(rms) MHz Vdc DRAIN--SOURCE VOLTAGE (VOLTS) DS Note: Each side of device measured separately. Figure 3. Capacitance versus Drain- -Source Voltage ...

Page 6

This above graph displays calculated MTTF in hours when the device is operated at V MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access ...

Page 7

Input Matching Network Figure 10. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 230 MHz f = 230 MHz Z load Vdc 100 mA 600 W ...

Page 8

MRFE6VP5600HR6 MRFE6VP5600HSR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 9 ...

Page 10

MRFE6VP5600HR6 MRFE6VP5600HSR6 10 RF Device Data Freescale Semiconductor ...

Page 11

RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 11 ...

Page 12

PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software ...

Page 13

How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter ...

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