IPD075N03L INFINEON [Infineon Technologies AG], IPD075N03L Datasheet

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IPD075N03L

Manufacturer Part Number
IPD075N03L
Description
OptiMOS Power-Transistor
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

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Part Number:
IPD075N03L G
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
IPD075N03L G
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD075N03L G
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INFINEON/英飞凌
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Part Number:
IPD075N03LG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPD075N03LG
Quantity:
2 508
Rev. 1.1
1)
Type
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
®
3 Power-Transistor
IPD075N03L G
PG-TO252-3-11
075N03L
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
V
D
D,pulse
AS
AS
GS
IPF075N03L G
PG-TO252-3-23
075N03L
V
V
V
V
T
T
T
I
D
page 1
C
C
C
GS
GS
GS
GS
=12 A, R
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
GS
C
C
=25 Ω
Product Summary
V
R
I
C
=25 °C
=100 °C
=25 °C
D
DS
IPS075N03L G
PG-TO251-3-11
075N03L
DS(on),max
IPS075N03L G
IPD075N03L G
Value
350
±20
50
43
49
35
50
50
IPU075N03L G
PG-TO251-3-21
075N03L
IPU075N03L G
IPF075N03L G
7.5
30
50
Unit
A
mJ
V
V
mΩ
A
2009-01-14

Related parts for IPD075N03L

IPD075N03L Summary of contents

Page 1

... =4 =100 ° =25 °C D,pulse =25 ° =25 Ω = page 1 IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L 7.5 mΩ IPU075N03L G PG-TO251-3-21 075N03L Value Unit 350 ±20 V 2009-01-14 ...

Page 2

... GSS =4 =30 A DS( |>2 DS(on)max = page 2 IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L G Value Unit 47 W -55 ... 175 °C 55/175/56 Values Unit min. typ. max 3.2 K 2.2 - 0.1 1 µ ...

Page 3

... V oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L G Values Unit min. typ. max. - 1400 1900 pF - 580 770 - 4.6 - ...

Page 4

... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0. [V] DS page 4 IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ...

Page 5

... Typ. forward transconductance g =f 100 ° [V] GS page 5 IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L =25 ° 3 [A] D =25 ° [ 100 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss 2 10 Coss Crss [V] DS page 6 IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L =250 µ - 100 140 T [° 175 °C, 98% 175 ° °C, 98% 0.5 1 1.5 V ...

Page 7

... Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L =30 A pulsed [nC] gate ...

Page 8

... Package Outline Footprint: Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO252-3-11 Packaging: page 8 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 9

... Package Outline PG-TO252-3-23: Outline Footprint: Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO252-3-23 page 9 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 10

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO251-3-11 page 10 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 11

... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO251-3-21 page 11 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 12

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPD075N03L G IPS075N03L G page 12 IPF075N03L G IPU075N03L G ...

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