IPD090N03LGE8177 INFINEON [Infineon Technologies AG], IPD090N03LGE8177 Datasheet

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IPD090N03LGE8177

Manufacturer Part Number
IPD090N03LGE8177
Description
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 2.0
1)
Type
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
3 Power-Transistor
2)
IPD090N03L G E8177
PG-TO252-3-11
090N03L
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
dv /dt
V
D
D,pulse
AS
AS
GS
V
V
V
V
T
T
T
I
I
di /dt =200 A/µs,
T
D
D
page 1
C
C
C
j,max
GS
GS
GS
GS
=12 A, R
=40 A, V
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
=175 °C
DS
GS
C
C
=24 V,
=25 Ω
Product Summary
V
R
I
C
=25 °C
=100 °C
=25 °C
D
DS
DS(on),max
IPD090N03L G E8177
Value
280
±20
40
37
40
30
40
40
6
30
40
9
Unit
A
mJ
kV/µs
V
V
mΩ
A
2010-02-23

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IPD090N03LGE8177 Summary of contents

Page 1

Type OptiMOS ™ 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state ...

Page 5

Typ. output characteristics I =f =25 ° parameter 120 5 V 100 Typ. transfer characteristics I =f |>2|I |R ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline Rev. 2.0 PG-TO252-3 page 8 IPD090N03L G E8177 2010-02-23 ...

Page 9

Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...

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