IPD090N03LGE8177 INFINEON [Infineon Technologies AG], IPD090N03LGE8177 Datasheet

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Type OptiMOS ™ 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...

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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state ...

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Typ. output characteristics I =f =25 ° parameter 120 5 V 100 Typ. transfer characteristics I =f |>2|I |R ...

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Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

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Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

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Package Outline Rev. 2.0 PG-TO252-3 page 8 IPD090N03L G E8177 2010-02-23 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...