IPB030N08N3G INFINEON [Infineon Technologies AG], IPB030N08N3G Datasheet
IPB030N08N3G
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IPB030N08N3G Summary of contents
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Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB030N08N3 G Value Unit ...
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Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions ...
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Parameter Dynamic characteristics Reverse Diode Symbol Conditions ...
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Power dissipation P T 250 200 150 100 100 T [° Safe operating area [V] ...
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Typ. output characteristics 500 400 300 200 100 [ Typ. transfer characteristics 300 250 200 150 100 ...
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Drain-source on-state resistance -60 - [° Typ. capacitances 10000 1000 100 [ ...
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Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge V ...
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PG-TO263-7 (D²-Pak) IPB030N08N3 G ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...