SPD09P06PLG INFINEON [Infineon Technologies AG], SPD09P06PLG Datasheet
SPD09P06PLG
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SPD09P06PLG Summary of contents
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SIPMOS Power-Transistor Feature P-Channel • P-channel Enhancement mode • Enhancement mode • Logic Level Logic Level prueb • 175°C operating temperature 1 75°C operating temperature • Avalanche ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot C SPD09P06PL 100 120 140 160 3 Safe operating area ...
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Typ. output characteristic =25° parameter µs p SPD09P06PL - 42W tot -20 -18 -16 -14 -12 - ...
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Drain-source on-state resistance DS(on) j parameter : SPD09P06PL 0.75 0.6 0.55 0.5 0.45 0.4 0.35 98% 0.3 0.25 typ 0.2 0.15 0.1 0.05 0 -60 -20 20 ...
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Typ. avalanche energy par -9 - 105 15 Drain-source ...
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Package outline: PG-TO252-3 Rev 2.5 page 8 SPD09P06PL G 2008-07-29 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...