SPD30N03S2L-10_08 INFINEON [Infineon Technologies AG], SPD30N03S2L-10_08 Datasheet
SPD30N03S2L-10_08
Related parts for SPD30N03S2L-10_08
SPD30N03S2L-10_08 Summary of contents
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... IEC climatic category; DIN IEC 68-1 product (FOM) DS(on) Marking 2N03L10 Symbol puls jmax dv/dt =175°C jmax tot Page 1 SPD30N03S2L-10 G Product Summary DS(on PG-TO252-3 Value 30 30 120 150 10 6 ±20 100 T -55... +175 stg 55/175/56 02-09-2008 mΩ ...
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... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) = 1.5K/W the chip is able to carry I thJC Page 2 SPD30N03S2L-10 G Values Unit min. typ. max 1.5 K 100 - - Values Unit min. typ. max 1.2 1 ...
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... GS V (plateau) V =24V, I =30A =25° =0V, I =30A =- /dt=100A/µ Page 3 SPD30N03S2L-10 G Values Unit min. typ. max. 23.8 47 1160 1550 pF - 450 600 - 120 175 - 6.1 9 3.7 4 ...
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... K 10.0µ 100 µ Page 4 SPD30N03S2L- ≥ 100 120 140 160 ) SPD30N03S2L- 0.50 single pulse - 02-09-2008 °C 190 ...
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... Typ. forward transconductance g = f(I DS(on)max fs parameter 3 Page 5 SPD30N03S2L- SPD30N03S2L- [ 3.5 4.0 4.5 5.0 5 =25° 02-09-2008 ...
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... Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 SPD30N03S2L- 0,4mA 50µ -60 - 100 ) µs p SPD30N03S2L- °C typ 175 °C typ ...
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... Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD30N03S2L- Gate = 30 A pulsed D SPD30N03S2L-10 0 max 0 max 02-09-2008 ...
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... Package outline: PG-TO252-3 Page 8 SPD30N03S2L-10 G 02-09-2008 ...
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... Page Page 9 SPD30N03S2L-10 G 02-09-2008 ...