SPD30N03S2L-20_08 INFINEON [Infineon Technologies AG], SPD30N03S2L-20_08 Datasheet
SPD30N03S2L-20_08
Related parts for SPD30N03S2L-20_08
SPD30N03S2L-20_08 Summary of contents
Page 1
... Excellent Gate Charge x R • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-20G PG- TO252 -3 Maximum Ratings °C, unless otherwise specified j Parameter 1) Continuous drain current T =25°C ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) = 2.5K/W the chip is able to carry I thJC Page 2 SPD30N03S2L-20 Values Unit min. typ. max. - 1.7 2.5 K 100 - - Values Unit min. typ. max 1.2 1 ...
Page 3
... GS V (plateau) V =24V, I =30A =25° =0V, I =30A =- /dt=100A/µ Page 3 SPD30N03S2L-20 Values Unit min. typ. max 530 700 pF - 200 275 - 1.7 2.2 ...
Page 4
... K 35.0µ 100 µ Page 4 SPD30N03S2L-20 ) ≥ 100 120 140 160 ) SPD30N03S2L- 0.50 single pulse - 02-09-2008 G °C 190 T C 0.20 0.10 0.05 0.02 0. ...
Page 5
... Typ. forward transconductance g = f(I DS(on)max fs parameter 5 Page 5 SPD30N03S2L- SPD30N03S2L- [ 4.0 4.5 5.0 6.0 7.0 10 =25° 02-09-2008 ...
Page 6
... C 10 rss Page 6 SPD30N03S2L- 373µ 23µA 0 -60 - 100 ) µs p SPD30N03S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 02-09-2008 G °C 180 ...
Page 7
... Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD30N03S2L-20 ) Gate = 30 A pulsed D SPD30N03S2L-20 0 max 0 max 02-09-2008 Gate ...
Page 8
... Package outline: PG-TO252-3 Page 8 G SPD30N03S2L-20 02-09-2008 ...
Page 9
... Page 9 SPD30N03S2L-20 G 02-09-2008 ...