bfg540w-xr NXP Semiconductors, bfg540w-xr Datasheet
bfg540w-xr
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bfg540w-xr Summary of contents
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... DISCRETE SEMICONDUCTORS DATA SHEET BFG540W BFG540W/X; BFG540W/XR NPN 9 GHz wideband transistor Product specification Supersedes data of 1997 Dec 04 2000 May 23 ...
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... BFG540W/X N7 BFG540W/XR N8 PINNING PIN DESCRIPTION BFG540W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter BFG540W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter BFG540W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter CONDITIONS open emitter = mA MHz ...
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... May 23 CONDITIONS open emitter open collector see Fig.3; note MBG248 150 200 Product specification BFG540W BFG540W/X; BFG540W/XR MIN. MAX 2.5 120 500 65 +150 175 CONDITIONS VALUE 85 C; note 1 180 UNIT ...
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... MHz and 805.25 MHz; measured amb = 810 MHz Product specification BFG540W BFG540W/X; BFG540W/XR MIN. TYP 2 100 120 9 0 ...
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... May 23 MRA749 handbook, halfpage C re (pF (mA MHz. C Fig.5 MLC044 (mA Product specification BFG540W/X; BFG540W/XR 1 0.8 0.6 0.4 0 Feedback capacitance as a function of collector-base voltage; typical values. BFG540W MRA750 (V) ...
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... G max (mA GHz; V Fig.8 MLC047 handbook, halfpage G max (MHz Fig.10 Gain as a function of frequency; typical 6 BFG540W/X; BFG540W/XR 30 gain (dB Gain as a function of collector current; typical values. 50 gain (dB MSG 30 ...
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... I C (mA amb Fig.12 Second order intermodulation distortion as MLC049 handbook, halfpage (mA Fig.14 Associated available gain as a function of 7 BFG540W/X; BFG540W/ (dB 275 mV 810 MHz ...
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... May 23 MLC050 handbook, halfpage F min (dB (MHz Fig.16 Associated available gain as a function of 8 Product specification BFG540W/X; BFG540W/ ass min (MHz frequency ...
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... 0 0.5 o 135 135 0.5 0.2 0.2 0 2.1 dB opt min max 0 1 0.5 o 135 BFG540W/X; BFG540W/XR circle 1 0.6 0 MLC051 1.0 1 0.6 0 MLC052 1 ...
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... May 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 o 135 135 40 MHz 3 GHz 135 Product specification BFG540W/X; BFG540W/XR 1 0.6 0 MHz MLC053 1.0 ); typical values MLC054 ); typical values. 21 BFG540W ...
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... May GHz o 135 40 MHz o 0.25 0.20 0.15 0.10 0.05 o 135 135 0.5 0.2 0.2 0 GHz 0.2 0.5 o 135 Product specification BFG540W/X; BFG540W/ MLC055 ); typical values. 12 1 0.6 0 MHz MLC056 1.0 ); typical values. 22 BFG540W ...
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... Philips Semiconductors NPN 9 GHz wideband transistor SPICE parameters for the BFG540W crystal SEQUENCE No. PARAMETER VAF 5 IKF 6 ISE VAR 11 IKR 12 ISC IRB 16 RBM (1) 19 XTB ( (1) 21 XTI 22 CJE 23 VJE 24 MJE 25 TF ...
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... VERSION IEC SOT343N 2000 May scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 13 BFG540W/X; BFG540W/ detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification BFG540W SOT343N ...
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... OUTLINE VERSION IEC SOT343R 2000 May scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 REFERENCES JEDEC EIAJ 14 BFG540W/X; BFG540W/ detail 2.2 0.45 0.23 0.2 0.2 2.0 0.15 0.13 EUROPEAN PROJECTION Product specification BFG540W SOT343R ...
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... May 23 BFG540W/X; BFG540W/XR DEFINITIONS This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. ...
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. + 101 ...