k9k4g08q0m Samsung Semiconductor, Inc., k9k4g08q0m Datasheet - Page 10

• Manufacturer Part Number: k9k4g08q0m
• Description: 512m X 8 Bit / 256m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
* :
AC TEST CONDITION
(K9XXGXXUXM-XCB0 :TA=0 to 70 C, K9XXGXXUXM-XIB0:TA=-40 to 85 C
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
NOTE : 1. X can be V
K9K4GXXQ0M : Vcc=1.70V~1.95V , K9XXGXXUXM : Vcc=2.7V~3.6V unless otherwise noted)
K9K4GXXX0M
K9W8G08U1M
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
K9K4GXXQ0M:Output Load (Vcc:1.8V +/-10%)
K9XXGXXUXM:Output Load (Vcc:3.0V +/-10%)
Input/Output Capacitance
Input Capacitance
sented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
gram factory-marked bad blocks.
cycles.
Each K9K4G08U0M chip in the K9W8G08U1M has Maximum 80 invalid blocks.
CLE
H
H
X
X
X
X
X
L
L
L
L
device
2. WP and PRE should be biased to CMOS high or CMOS low for standby.
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is pre-
Item
ALE
X
H
H
X
X
X
X
L
L
L
L
IL
(1)
or V
Parameter
(
T
IH.
A
Valid Block Number
Valid Block Number
K9K4G16Q0M
K9K4G16U0M
=25 C, V
CE
H
Parameter
L
L
L
L
L
L
X
X
X
X
Refer to the attached technical notes for appropriate management of invalid blocks.
CC
=1.8V/3.3V, f=1.0MHz)
Symbol
C
C
WE
H
X
X
X
X
X
I/O
IN
RE
Symbol
Test Condition
H
H
H
H
H
H
X
X
X
X
N
N
VB
VB
V
V
1 TTL GATE and CL=30pF
IL
IN
=0V
=0V
10
0V/V
K9K4GXXQ0M
WP
X
X
H
H
H
X
X
H
H
L
0V to Vcc
CC
Vcc/2
(2)
5ns
K9XXGXXXXM
8032*
4016
0V/V
Min
PRE
20
20
X
X
X
X
X
X
X
X
X
X
CC
(2)
Read Mode
Write Mode
Data Input
Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
Max
K9W8G08U1M
FLASH MEMORY
8192*
4096
Max
1 TTL GATE and CL=50pF
40
40
Command Input
Address Input(5clock)
Command Input
Address Input(5clock)
K9XXGXXUXM
Mode
0V to Vcc
Vcc/2
. Do not erase or pro-
5ns
Blocks
Blocks
Unit
Unit
pF
pF