k9k4g08q0m Samsung Semiconductor, Inc., k9k4g08q0m Datasheet - Page 11

• Manufacturer Part Number: k9k4g08q0m
• Description: 512m X 8 Bit / 256m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
Program / Erase Characteristics
NOTE : 1. Max. time of
AC Timing Characteristics for Command / Address / Data Input
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Program Time
Dummy Busy Time for Cache Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
ALE to Data Loading Time
Parameter
t
CBSY
Parameter
K9K4G16Q0M
K9K4G16U0M
depends on timing between internal program completion and data in
Spare Array
Main Array
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
ADL
WC
WH
CH
WP
DH
CS
DS
Symbol
t
t
t
PROG
CBSY
Nop
BERS
K9K4GXXQ0M(1.8V)
K9K4G16U0M(3.3V)
11
Min
100
25
10
35
10
25
25
10
20
10
45
15
Min
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
K9XXG08UXM(3.3V)
Typ
300
3
2
Min
100
-
-
10
15
15
10
10
30
10
5
5
5
5
FLASH MEMORY
Max
700
700
Max
4
4
3
-
-
-
-
-
-
-
-
-
-
-
-
cycles
cycles
Unit
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
s
s