k9k4g08q0m Samsung Semiconductor, Inc., k9k4g08q0m Datasheet - Page 19

• Manufacturer Part Number: k9k4g08q0m
• Description: 512m X 8 Bit / 256m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9W8G08U1M
K9K4G08Q0M
K9K4G08U0M
Input Data Latch Cycle
Serial Access Cycle after Read
I/Ox
ALE
CLE
CE
WE
CE
RE
R/B
I/Ox
K9K4G16Q0M
K9K4G16U0M
NOTES : Transition is measured 200mV from steady state voltage with load.
t
ALS
t
t
RR
REA
t
t
WP
CEA
t
This parameter is sampled and not 100% tested.
DS
DIN 0
t
WC
(CLE=L, WE=H, ALE=L)
t
DH
t
NOTES : DIN final means 2112(X8) or 1056(X16)
WH
Dout
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
19
t
DH
Dout
t
RHZ*
t
DIN final*
WP
t
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
t
RHZ*
CHZ*
OH
t
OH