thinpaktm Silicon Power Corporation, thinpaktm Datasheet

no-image

thinpaktm

Manufacturer Part Number
thinpaktm
Description
Solidtrontm N-mos Vcs, Thinpaktm Data Sheet Rev 2 - 07/10/2008
Manufacturer
Silicon Power Corporation
Datasheet
1.THINPAKTM.pdf (6 pages)
Description
Features
Absolute Maximum Ratings
This SILICON POWER product is protected by one or more of the following U.S. Patents:
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
www.siliconpower.com
5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635
Peak Off-State Voltage
Peak Reverse Voltage
Off-State Rate of Change of Voltage Immunity
Continuous Anode Current at 110
Repetitive Peak Anode Current (Pulse Width=1uSec)
Rate of Change of Current
Continuous Gate-Cathode Voltage
Peak Gate-Cathode Voltage
Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State
Maximum Junction Temperature
Maximum Soldering Temperature (Installation)
This voltage controlled Solidtron
utilizes an n-type MOS-Controlled Thyristor mounted on a
ThinPak
The VCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.
The ThinPak
substrate attached to the silicon using 302
underfill is applied to protect the high voltage termination from
debris. All exterior metal surfaces are tinned with 63pb/37sn
solder providing the user with a circuit ready part. It's small size
and low profile make it extremely attractive to high dI/dt
applications where stray series inductance must be kept to a
minimum.
1400V Peak Off-State Voltage
32A Continuous Rating
32A Continuous Rating
4kA Surge Current Capability
>120kA/uSec dI/dt Capability
TM
, ceramic "chip-scale" hybrid.
TM
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890
Package is a perforated, metalized ceramic
5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773
TM
o
C
(VCS) discharge switch
o
C solder. An epoxy
<100nSec Turn-On Delay
Low On-State Voltage
Low On-State Voltage
MOS Gated Control
Low Inductance Package
5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957
4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206
5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671
Package
Schematic Symbol
SMCTTA32N14A10
Gate Return (GR)
Gate Return (GR)
Gate Return
N-MOS VCS, ThinPak
V
Anode
SYMBOL
Data Sheet (Rev 2 - 07/10/2008)
GK(OFF-MIN)
V
V
V
dv/dt
V
dI/dt
4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668
I
I
Gate (G)
T
A110
ASM
DRM
RRM
GKM
GKS
JM
Solidtron
Size - 4
VALUE
5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174
+/-20
+/-25
1400
5000
4000
120
150
260
32
-5
-5
Cathode (K)
Anode (A)
TM
ThinPak
Gate Bond Area
Cathode Bond Area
4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
TM
kA/uSec
V/uSec
UNITS
o
o
V
V
A
A
V
V
V
C
C
TM
CAO 05/28/09
CAO 05/28/09

Related parts for thinpaktm

Image
Part Number
Description
Manufacturer
Datasheet
Request R
thi-2-2423m
Part Number:
thi-2-2423m
Description:
Dc/dc Converters
Manufacturer:
Traco Power
Datasheet:
THI-2-2423M.pdf (3 pages)
thi-2422
Part Number:
thi-2422
Description:
Dc/dc Converter
Manufacturer:
Traco Power
Datasheet:
THI-2422.pdf (3 pages)
SDD303KT
Part Number:
SDD303KT
Description:
Sdd303 Is Designed Specifically For High Current Surges As Appropriate For Pulse Power Applications.
Manufacturer:
Silicon Power Corporation
Datasheet:
SDD303KT.pdf (2 pages)
PSM80BA10
Part Number:
PSM80BA10
Description:
Power Semiconductor Half-bridge Module
Manufacturer:
Silicon Power Corporation
Datasheet:
PSM80BA10.pdf (3 pages)
MCM-SSCL1500V700A4KVB
Part Number:
MCM-SSCL1500V700A4KVB
Description:
Power Semiconductor Half-bridge Module Data Sheet Rev 0 - 02/06/09
Manufacturer:
Silicon Power Corporation
Datasheet:
MCM-SSCL1500V700A4KVB.pdf (5 pages)
MIG20J103H
Part Number:
MIG20J103H
Description:
Silicon N-channel IGBT intelligent power module for high power switching, motor control applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MIG20J103H.pdf (10 pages)
MG150J1BS11
Part Number:
MG150J1BS11
Description:
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG150J1BS11.pdf (4 pages)
MG600Q1US51
Part Number:
MG600Q1US51
Description:
Silicon N-channel IGBT GTR module for high power switching, motor control applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG600Q1US51.pdf (6 pages)
MP6754
Part Number:
MP6754
Description:
Silicon N Channel IGBT(High Power Switching Applications Motor Control Applications)
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MP6754.pdf (5 pages)
MG50M2YK1
Part Number:
MG50M2YK1
Description:
Silicon NPN Triple Diffused Type(High Power Switching / Motor Control Applications)
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
MG50M2YK1.pdf (4 pages)
2sa1034
Part Number:
2sa1034
Description:
Silicon Pnp Epitaxial Planer Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
2SA1034.pdf (4 pages)
2sa1748
Part Number:
2sa1748
Description:
Silicon Pnp Epitaxial Planer Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
2SA1748.pdf (3 pages)
2sc5026
Part Number:
2sc5026
Description:
Silicon Npn Epitaxial Planer Type For Low-frequency Output Amplification
Manufacturer:
Panasonic Corporation of North America
Datasheet:
2SC5026.pdf (3 pages)
2sc5950
Part Number:
2sc5950
Description:
Silicon Npn Epitaxial Planar Type
Manufacturer:
Panasonic Corporation of North America
Datasheet:
2SC5950.pdf (2 pages)
2sc5906
Part Number:
2sc5906
Description:
Silicon Npn Epitaxial Type High-speed Switching Applications
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SC5906.pdf (5 pages)

thinpaktm Summary of contents

Page 1

Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com Description TM This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPak TM , ceramic "chip-scale" hybrid. The VCS features the high peak current ...

Page 2

Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com Performance Characteristics Parameters Anode to Cathode Breakdown Voltage Anode-Cathode Off-State Current Gate-Cathode Turn-On Threshold Voltage Gate-Cathode Leakage Current Anode-Cathode On-State Voltage Input Capacitance Turn-on Delay Time Rate of Change of ...

Page 3

Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com Typical Performance Curves (Continued) Figure 4. Turn-On Delay Characteristics o R =4.7Ω - 500Ω Figure 6. 0.2uF Discharge Pulse Performance Characteristics (See Figure 9.) V ...

Page 4

Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com Typical Performance Curves (Continued) Figure 8. Pulses to Failure (Pulse Widths < 100uSec) Test Circuit and Waveforms Test Circuit and Waveforms R G +5V Gate Driver -5V Figure 9. 0.2uF ...

Page 5

Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com Application Notes A1. Junction Temperature Calculation The figure below shows a lump model of the thermal properties of the size 4 thinPak packaged VCS, from the 2-mil solder on the ...

Page 6

Great Valley Parkway Malvern, PA 19355 Ph: 610-407-4700 www.siliconpower.com Recommended Reflow Profile: Revision History Rev Date 07-10-2008 04242009-NB-0007 SMCTTA32N14A N-MOS VCS, ThinPak Data Sheet (Rev 2 - 07/10/2008) Nature of Change Initial Issue TM Solidtron TM ...

Related keywords