q67040-s4185 Infineon Technologies Corporation, q67040-s4185 Datasheet

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q67040-s4185

Manufacturer Part Number
q67040-s4185
Description
N-channel Mosfets >500v?900v Power Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Type
SPB07N60S5
Rev. 2.3
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
D
D
C
C
= - A, V
= 7.3 A, V
= 25 °C
= 100 °C
DD
DD
= 50 V
= 50 V
T
C
Package
PG-TO263
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4185
Page 1
jmax
jmax
1)
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
AS
AR
GS
GS
tot
j ,
T
stg
Marking
07N60S5
R
-55... +150
DS(on)
V
I
DS
D
Value
14.6
±20
± 30
230
7.3
4.6
0.5
7.3
83
SPB07N60S5
2005-07-21
PG-TO263
600
0.6
7.3
Unit
A
mJ
A
V
W
°C
V
A

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q67040-s4185 Summary of contents

Page 1

... Avalanche energy, repetitive Avalanche current, repetitive t Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature Rev. 2.3 Ordering Code Q67040-S4185 Symbol puls jmax limited jmax limited by T ...

Page 2

Maximum Ratings Parameter Drain Source voltage slope = 480 7 125 ° Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on ...

Page 3

Electrical Characteristics , at T Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to ...

Page 4

Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Typical Transient Thermal Characteristics Symbol Value typ. Thermal resistance 0.024 R th1 0.046 R th2 ...

Page 5

Power dissipation tot C SPP07N60S5 100 Typ. output characteristic =25°C ...

Page 6

Typ. drain-source on resistance DS(on) D parameter: T =150° mΩ Typ. transfer characteristics ≥ ...

Page 7

Forward characteristics of body diode parameter µ SPP07N60S5 °C typ 150 °C ...

Page 8

Avalanche power losses parameter: E =0.5mJ AR 300 W 200 150 100 Typ. C stored energy oss oss DS 5.5 ...

Page 9

Definition of diodes switching characteristics Rev. 2.3 Page 9 SPB07N60S5 2005-07-21 ...

Page 10

PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2.3 Page 10 SPB07N60S5 2005-07-21 ...

Page 11

Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...

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