q67050-a4114 Infineon Technologies Corporation, q67050-a4114 Datasheet

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q67050-a4114

Manufacturer Part Number
q67050-a4114
Description
Fast Igbt2 Igbt Chip In Npt-technology
Manufacturer
Infineon Technologies Corporation
Datasheet
1.Q67050-A4114.pdf (4 pages)
IGBT Chip in NPT-technology
FEATURES:
Chip Type
MECHANICAL PARAMETER:
Raster size
Emitter pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7141-S, Edition 2, 03.09.2003
SIGC25T120CS
1200V NPT technology
180µm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
V
1200V
CE
I
Cn
15A
Die Size
5.71 x 4.53 mm
This chip is used for:
Applications:
drives, SMPS, resonant
applications
suitable for epoxy and soft solder die bonding
< 6 month at an ambient temperature of 23°C
store in original container, in dry nitrogen,
electrically conductive glue or solder
2
2 x (2.18 x 1.6)
1400 nm Ni Ag –system
5.71 x 4.53
1.09 x 0.68
25.9 / 18.7
0.65mm ; max 1.2mm
SIGC25T120CS
3200 nm Al Si 1%
Package
180
150
270
sawn on foil Q67050-A4114
Al, <500µm
Photoimide
555 pcs
Ordering Code
G
mm
mm
µm
grd
C
E
2

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q67050-a4114 Summary of contents

Page 1

... SIGC25T120CS Package Ordering Code sawn on foil Q67050-A4114 mm 180 µm 150 mm 270 grd 555 pcs Photoimide 3200 Al, < ...

Page 2

MAXIMUM RATINGS: Parameter Collector-emitter voltage = collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Operating junction and storage temperature 1 ) depending on thermal properties of assembly STATIC ...

Page 3

CHIP DRAWING: Edited by INFINEON Technologies HV3, L 7141-S, Edition 2, 03.09.2003 SIGC25T120CS ...

Page 4

FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet DESCRIPTION: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation ...

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