q67050-a4113 Infineon Technologies Corporation, q67050-a4113 Datasheet

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q67050-a4113

Manufacturer Part Number
q67050-a4113
Description
Fast Igbt2 Igbt Chip In Npt-technology
Manufacturer
Infineon Technologies Corporation
Datasheet
1.Q67050-A4113.pdf (4 pages)
IGBT Chip in NPT-technology
FEATURES:
Chip Type
SIGC16T120CS
MECHANICAL PARAMETER:
Raster size
Area total / active
Emitter pad size
Gate pad size
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metalization
Collector metalization
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
Edited by INFINEON Technologies AI PS DD HV3, L 7131-S, Edition 2, 03.09.2003
1200V NPT technology
180µm chip
short circuit prove
positive temperature coefficient
easy paralleling
V
1200V
CE
I
Cn
8A
Die Size
4.04 x 4 mm
This chip is used for:
Applications:
SGP07N120
drives, SMPS, resonant
applications
suitable for epoxy and soft solder die bonding
< 6 month at an ambient temperature of 23°C
store in original container, in dry nitrogen,
electrically conductive glue or solder
2
1400 nm Ni Ag –system
16.16 / 10.4
1.88x2.18
0.71x1.08
Package
4.04 x 4
0.65mm ; max 1.2mm
SIGC16T120CS
3200 nm Al Si 1%
sawn on foil
180
150
0
Al, 500µm
Photoimide
898 pcs
Ordering Code
Q67050-A4113
G
mm
mm
deg
µm
C
E
2

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q67050-a4113 Summary of contents

Page 1

... SIGC16T120CS G Package Ordering Code sawn on foil Q67050-A4113 4. 16.16 / 10.4 1.88x2.18 0.71x1.08 180 150 0 898 pcs Photoimide 3200 1400 – ...

Page 2

MAXIMUM RATINGS: Parameter Collector-emitter voltage = collector current, limited by T Pulsed collector current, t limited Gate emitter voltage Operating junction and storage temperature 1 ) depending on thermal properties of assembly STATIC ...

Page 3

CHIP DRAWING: Edited by INFINEON Technologies HV3, L 7131-S, Edition 2, 03.09.2003 SIGC16T120CS ...

Page 4

FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet Description: AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation ...

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