q67050-a4113 Infineon Technologies Corporation, q67050-a4113 Datasheet - Page 2

• Manufacturer Part Number: q67050-a4113
• Description: Fast Igbt2 Igbt Chip In Npt-technology
• Manufacturer: Infineon Technologies Corporation

MAXIMUM RATINGS:
Parameter
Collector-emitter voltage, T j =25 C
DC collector current, limited by T
Pulsed collector current, t
Gate emitter voltage
Operating junction and storage temperature
1 )
STATIC CHARACTERISTICS (tested on chip), T j =25 C, unless otherwise specified:
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
DYNAMIC CHARACTERISTICS (tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS (tested at component), Inductive Load:
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
* switching conditions different to LowLoss, Standard, IGBT3; under comparable switching conditions 40%
Edited by INFINEON Technologies AI PS DD HV3, L 7131-S, Edition 2, 03.09.2003
faster than Standard. V
depending on thermal properties of assembly
alues also influenced by parasitic L- and C- in measurement and package.
p
limited by T
jmax
jmax
V
V
V
I
I
C
C
C
t
t
t
t
Symbol
CES
GES
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
(BR)CES
CE(sat)
GE(th)
i s s
o s s
r s s
V
V
f =1MHz
T
V
I
V
R
V
C
I
C
j
V
C E
G E
C C
G E
G
V
CE
= 2 5 C
=8A
=350µA , V
V
= 4 7
GE
CE
=1200V , V
= 2 5 V ,
= 0 V ,
= + 1 5 / 0 V ,
=800V,
GE
Conditions*
Conditions
Conditions
=0V , I
=0V , V
V
I
I
V
T
=15V, I
C
c p u l s
j
CE
G E
, T
Symbol
s t g
C
=500µA
GE
C
GE
SIGC16T120CS
=8A
=20V
GE
=V
=0V
CE
min.
min.
1200
min.
2.5
3.0
-55 ... +150
-
-
-
-
-
-
-
Value
1200
24
1 )
20
Value
Value
typ.
Value
typ.
typ.
720
440
3.1
4.0
90
50
27
29
21
max.
max.
max.
120
870
110
570
3.6
5.0
60
35
38
27
1
Unit
°C
Unit
pF
Unit
ns
V
A
A
V
Unit
µA
nA
V