mw4ic2020n Freescale Semiconductor, Inc, mw4ic2020n Datasheet
mw4ic2020n
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mw4ic2020n Summary of contents
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... Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage structure is rated for Volt operation and covers all typical cellular base station modulation formats. ...
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... W CW out 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. MW4IC2020NBR1 MW4IC2020GNBR1 2 Stage 1 Stage 2 Stage 3 Rating 3 = 25° ...
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... Max Unit = 80 mA 240 mA 250 mA, DQ1 DQ2 DQ3 — 30 — dB — 5 — % — — dBc — — dBc — — dBc = 26 Vdc mA, DD DQ1 — 29 — dB — 15 — % — 1 — % rms — — dBc — — dBc MW4IC2020NBR1 MW4IC2020GNBR1 3 ...
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... Microstrip Z3 0.345″ x 0.236″ Microstrip Z4 0.327″ x 0.087″ Microstrip Z5 0.271″ x 0.087″ Microstrip Figure 3. MW4IC2020NBR1(GNBR1) Test Circuit Schematic Table 6. MW4IC2020NBR1(GNBR1) Test Circuit Component Designations and Values Part C1, C2 C5, C6 C9, C11 C10 C12 ...
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... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MW4IC2020NBR1(GNBR1) Test Circuit Component Layout RF Device Data Freescale Semiconductor ...
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... DQ2 DQ3 f = 1960 MHz 31 29 η 0 OUTPUT POWER (WATTS) CW out Figure 8. Power Gain and Drain Efficiency versus Output Power MW4IC2020NBR1 MW4IC2020GNBR1 6 TYPICAL CHARACTERISTICS G IRL η Vdc (PEP) out = 80 mA 200 mA 300 mA DQ2 DQ3 IMD 1850 1900 ...
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... I = 230 mA DQ2 DQ3 25_C −30_C OUTPUT POWER (WATTS) AVG. out = 26 Vdc = 80 mA 230 mA 230 mA DQ2 DQ3 −30_C T = 25_C C 85_C 85_C 25_C −30_C OUTPUT POWER (WATTS) AVG. out versus Output Power @ 1960 MHz MW4IC2020NBR1 MW4IC2020GNBR1 2000 100 100 7 ...
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... Figure 16. MTTF Factor versus Junction Temperature MW4IC2020NBR1 MW4IC2020GNBR1 8 TYPICAL CHARACTERISTICS 3rd Stage 2nd Stage 1st Stage 90 100 110 120 130 140 150 160 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ± ...
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... DQ3 load MHz Ω 1805 40.00 + j6.50 8.75 - j1.42 1842 40.00 + j2.00 7.00 - j2.70 1880 40.00 - j1.50 5.90 - j2.97 1930 40.00 - j1.80 5.46 - j3.20 1960 40.00 - j2.10 4.30 - j3.35 1990 40.00 - j2.60 4.45 - j3. Device input impedance as measured from in gate to ground Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load = 20 W PEP out Ω MW4IC2020NBR1 MW4IC2020GNBR1 9 ...
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... MW4IC2020NBR1 MW4IC2020GNBR1 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 11 ...
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... MW4IC2020NBR1 MW4IC2020GNBR1 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 13 ...
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... MW4IC2020NBR1 MW4IC2020GNBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW4IC2020NBR1 MW4IC2020GNBR1 15 ...
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... RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MW4IC2020NBR1 MW4IC2020GNBR1 Document Number: MW4IC2020N Rev. 9, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...