NBB-502-E RFMD [RF Micro Devices], NBB-502-E Datasheet
NBB-502-E
Related parts for NBB-502-E
NBB-502-E Summary of contents
Page 1
... High P1dB of +14.0dBm@6.0GHz • Single Power Supply Operation • 50Ω I/O Matched for High Freq. Use 3 Ground Ordering Information 5 NBB-502 NBB-502-T1 NBB-502-E NBB-X-K1 RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA NBB-502 CASCADABLE BROADBAND 0.025 min 0.50 nom 0.125 max 1.00 min ...
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... NBB-502 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Overall Small Signal Power Gain, S21 19.0 16.0 Gain Flatness Input and Output VSWR ...
Page 3
... Because DC is present on this pin blocking capacitor, suitable for the frequency of operation, should be used in most applica- tions. The supply side of the bias network should also be well bypassed. 9 GND Same as pin 1. Rev A5 060124 . The resistor is selected to set the – DEVICE R = ------------------------------------------ - I CC NBB-502 Interface Schematic RF OUT RF IN 4-59 ...
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... NBB-502 Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. In Recommended Bias Resistor Values Supply Voltage Bias Resistor, R (Ω Die Attach The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip ...
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... Extended Frequency InGaP Amplifier Designer’s Tool Kit This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers. Each tool kit contains the following. • 5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers • ...
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... NBB-502 FLANGE HUB All dimensions in mm 0.30 ± 0.05 R0.3 MAX. Ko SECTION A-A NOTES sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 100 mm. 3. Material: PS and Bo measured on a plane 0.3 mm above the bottom of the pocket measured from a plane on the inside bottom of the pocket to the surface of the carrier. ...
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... Amplifier Current /Gain versus P OUT IN 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 P (dBm) IN Third Order Intercept versus Frequency at 25°C 30.0 25.0 20.0 15.0 10.0 5.0 0.0 1.0 2.0 3.0 Frequency (GHz) Rev A5 060124 20.0 15.0 10.0 5.0 0.0 40.00 45.00 50.00 1.0 (mA GHz 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 Pout (dBm) 2.0 Gain (dB) 0.0 -2.0 0.0 2.0 4.0 -14.0 4.0 5.0 6.0 NBB-502 P1dB versus Frequency at 25°C 2.0 3.0 4.0 5.0 Frequency (GHz) P /Gain versus GHz OUT IN Pout (dBm) Gain (dB) -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 P (dBm) IN 6.0 0.0 2.0 4-63 ...
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... NBB-502 Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S11 versus Frequency at +25°C ...