NBB-X-K1 RFMD [RF Micro Devices], NBB-X-K1 Datasheet
NBB-X-K1
Related parts for NBB-X-K1
NBB-X-K1 Summary of contents
Page 1
... I/O Matched for High Frequency 3 Use Ground Ordering Information 5 NBB-312 NBB-312-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively) NBB-312-E NBB-X-K1 RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA NBB-312 CASCADABLE BROADBAND 0.025 min 0.50 nom 0.125 max 1.00 min 0.50 nom 1 ...
Page 2
... NBB-312 Absolute Maximum Ratings Parameter RF Input Power Power Dissipation Device Current Channel Temperature Operating Temperature Storage Temperature Exceeding any one or a combination of these limits may cause permanent damage. Parameter Min. Overall Small Signal Power Gain, S21 12.5 12.0 11.4 Gain Flatness, GF Input VSWR Output VSWR ...
Page 3
... Because DC is present on this pin blocking capacitor, suitable for the frequency of operation, should be used in most applica- tions. The supply side of the bias network should also be well bypassed. 9 GND Same as pin 1. Rev A3 030912 . The resistor is selected to set the – DEVICE ------------------------------------------ - NBB-312 Interface Schematic RF OUT RF IN 4-27 ...
Page 4
... NBB-312 Application notes related to biasing circuit, device footprint, and thermal considerations are available on request. In Recommended Bias Resistor Values Supply Voltage Bias Resistor, R (Ω Bonding Temperature (Wedge or Ball recommended that the heater block temperature be set to 160°C±10°C. ...
Page 5
... NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers • 5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers • 2 Broadband Evaluation Boards and High Frequency SMA Connectors • Broadband Bias Instructions and Specification Summary Index for ease of operation Rev A3 030912 NBB-X-K1 NBB-312 4-29 ...
Page 6
... NBB-312 FLANGE All dimensions in mm 0.30 ± 0.05 R0.3 MAX. SECTION A-A NOTES sprocket hole pitch cumulative tolerance ±0.2. 2. Camber not to exceed 100 mm. 3. Material: PS and Bo measured on a plane 0.3 mm above the bottom of the pocket measured from a plane on the inside bottom of the pocket to the surface of the carrier. ...
Page 7
... P1dB versus Frequency at 25°C 20.0 15.0 10.0 5.0 0.0 1.0 3.0 5.0 7.0 9.0 Frequency (GHz) P /Gain versus P OUT IN 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -6.0 -15.0 -10.0 -5.0 P (dBm) IN Rev A3 030912 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 11.0 13.0 15.0 -14 GHz 30.0 25.0 20.0 15.0 10.0 5.0 Pout (dBm) Gain (dB) 0.0 0.0 5.0 10.0 1.0 NBB-312 P /Gain versus GHz OUT IN -9.0 -4.0 1.0 P (dBm) IN Third Order Intercept versus Frequency at 25°C 3.0 5.0 7.0 9.0 11.0 Frequency (GHz) Pout (dBm) Gain (dB) 6.0 13.0 15.0 4-31 ...
Page 8
... NBB-312 Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. The insertion losses of the evaluation board and connectors are as follows: 1GHz to 4GHz=-0.06dB 5GHz to 9GHz=-0.22dB 10GHz to 14GHz=-0.50dB 15GHz to 20GHz=-1.08dB S11 versus Frequency at +25°C ...