SP0000-87977 INFINEON [Infineon Technologies AG], SP0000-87977 Datasheet

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SP0000-87977

Manufacturer Part Number
SP0000-87977
Description
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Rev. 1.0
OptiMOS
Features
• N-channel - Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
• ESD Class 3 (HBM)
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Drain gate voltage
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N06S3L-03
IPI100N06S3L-03
IPP100N06S3L-03
Green package (lead free)
EIA/JESD22-A114-B
®
-T Power-Transistor
2)
2)
4)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
3)
PG-TO263-3-2
Symbol
I
I
E
V
V
P
T
D
D,pulse
j
AS
DG
GS
tot
, T
Ordering Code
SP0000-87978
SP0000-87979
SP0000-87977
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=50 A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
PG-TO262-3-1
GS
Product Summary
V
R
I
Marking
3PN06L03
3PN06L03
3PN06L03
D
=10 V
DS
DS(on),max
IPI100N06S3L-03, IPP100N06S3L-03
(SMD version)
-55 ... +175
55/175/56
Value
100
100
400
690
±16
300
55
PG-TO220-3-1
IPB100N06S3L-03
100
2.7
55
2005-09-16
Unit
A
mJ
V
V
W
°C
V
m
A

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SP0000-87977 Summary of contents

Page 1

... Avalanche energy, single pulse 2) Drain gate voltage 4) Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary PG-TO263-3-2 PG-TO262-3-1 Ordering Code SP0000-87978 SP0000-87979 SP0000-87977 Symbol Conditions I T =25 ° =100 ° = =25 ° ...

Page 2

Parameter 2) Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current ...

Page 3

Parameter 2) Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode ...

Page 4

Power dissipation P =f ≥ tot C GS 350 300 250 200 150 100 100 T [° Safe operating area I =f =25 ° ...

Page 5

Typ. output characteristics ° parameter 400 300 200 100 Typ. transfer characteristics ...

Page 6

Typ. gate threshold voltage GS(th parameter 2.5 2 1.5 230µA 1 0.5 0 -60 - [° Typical forward diode characteristicis IF ...

Page 7

Typical avalanche energy parameter 1400 1200 30 A 1000 40 A 800 50 A 600 400 200 100 T [° Typ. gate charge V = f(Q ...

Page 8

Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of ...

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