IS61/64WV20488BLL ISSI [Integrated Silicon Solution, Inc], IS61/64WV20488BLL Datasheet

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IS61/64WV20488BLL

Manufacturer Part Number
IS61/64WV20488BLL
Description
2M x 8 HIGH-SPEED CMOS STATIC RAM
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet
IS61WV20488ALL
IS61/64WV20488BLL
2M x 8 HIGH-SPEED CMOS STATIC RAM
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
08/04/2010
FEATURES
• High-speed access times:
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
• Easy memory expansion with CE and OE op-
• CE power-down
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single power supply
• Packages available:
• Industrial and Automotive Temperature Support
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
greater noise immunity
tions
required
– V
– V
– 48-ball miniBGA (9mm x 11mm)
– 44-pin TSOP (Type II)
8, 10, 20 ns
speed = 20ns for Vcc = 1.65V to 2.2V
speed = 10ns for Vcc = 2.4V to 3.6V
speed = 8ns for Vcc = 3.3V + 5%
dd
dd
1.65V to 2.2V (IS61WV20488ALL)
2.4V to 3.6V (IS61/64WV20488BLL)
I/O0-I/O7
A0-A20
VDD
GND
WE
OE
CE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
1-800-379-4774
DESCRIPTION
The
IS64WV20488BLL are very high-speed, low
power, 2M-word by 8-bit CMOS static RAM. The
IS61WV20488ALL/BLL and IS64WV20488BLL are fab-
ricated using
ogy. This highly reliable process coupled with innovative
circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV20488ALL/BLL and IS64WV20488BLL
operate from a single power supply and all inputs are
TTL-compatible.
The IS61WV20488ALL/BLL and IS64WV20488BLL are
available in 48 ball mini BGA and 44-pin TSOP (Type II)
packages.
ISSI
MEMORY ARRAY
COLUMN I/O
IS61WV20488ALL/BLL and
2M X 8
ISSI
's high-performance CMOS technol-
AUGUST 2010
1

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